Barrier Height of InP Schottky Diodes Prepared by Means of UV Oxidation
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概要
- 論文の詳細を見る
Schottky diodes of Au/oxide/InP are fabricated by means of UV oxidation and evaluated by means of current-voltage (I-V) and capacitance-voltage (C-V) measurements. Their barrier heights are estimated from the I-V curve at room temperature, the 1/C^2-V plot and the Richardson plot. Remarkable apparent improvement of the I-V characteristics is achieved with the use of UV oxidation. However, there is a discrepancy among the barrier heights calculated from the three characteristics. It is revealed that these results are caused by the reduction in the saturation current due to electron tunneling through the UV oxide layer. On the basis of a tunneling model, the relationship between the tunneling probability and the thickness of the oxide is discussed.
- 社団法人応用物理学会の論文
- 1993-02-15
著者
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Niu Hirohiko
Department Of Electronics Faculty Of Engineering Himeji Institute Of Technology
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NAKAMURA Jiro
NTT Telecommunications Energy Laboratories
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Nakamura Junko
Central Research Laboratory Hitachi Ltd.
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Nakamura J
Hokkaido Univ. Sapporo Jpn
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Kishino S
Department Of Electronics Faculty Of Engineering Himeji Institute Of Technology
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Kishino Seigo
Department of Electronics, Faculty of Engineering, Himeji Institute of Technology
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Niu Hirohiko
Department Of Electrical Electronic And Computer Engineering Graduate School Of Engineering Himeji I
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Nakamura Junichi
Department Of Orthopaedic Surgery Graduate School Of Medicine Chiba University
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Nakamura Junichi
Department Of Materials Science The University Of Shiga Prefecture
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Nakamura Junichi
Department Of Electrical Engineering Hiroshima University
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Nakamura Junichi
Department Of Electronics Faculty Of Engineering Himeji Institute Of Technology
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Nakamura Junichi
Department of Chemical Engineering, Graduate School of Science and Engineering, Tokyo Institute of Technology
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