Deguchi K | Department Of Electronics And Information Systems Osaka University

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概要

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著作論文

Trap Density Dependent Inelastic Tunneling in Stress-Induced Leakage Current
Trap Density Dependent Inelastic Tunneling in Stress-Induced Leakage Current
Sub-100-nm Device Fabrication using Proximity X-Ray Lithography at Five Levels
Patterning Yield of Sub-100-nm Holes Limited by Fluctuation of Exposure and Development Reactions in Synchrotron Radiation Lithography Using Biased Mask Patterns
Lithographic Performance of a Chemically Amplified Resist Developed for Synchrotron Radiation Lithography in the Sub-100-nm Region
Reduction of Image Shortening in Two-Dimensional Pattern Replication Using X-Ray Lithography
Dissolution Characteristics and Surface Morphology of Chemically Amplified Resists in X-Ray Lithography
Phantom Exposure of Chemically Amplified Resist in KrF Excimer Laser Lithography
Effects of photo- and Auger Electron Scattering on Resolution and Linewidth Control in SR Lithography : Lithography Technology
Effects of Photo- and Auger Electron Scattering on Resolution and Linewidth Control in SR Lithography
Performance of X-Ray Stepper for Next-Generation Lithography
Deep-Submicron Single-Gate Complementary Metal Oxide Semiconductor (CMOS) Technology Using Channel Preamorphization
Deep-Submicron Single-Gate CMOS Technology Using Channel Preamorphization
Mask Contamination Induced by X-Ray Exposure
Effect of Mechanical Vibration on Patterning Characteristics in Synchrotron Radiation Lithography
Effect of Acid Diffusion on Resolution of a Chemically Amplified Resist in X-Ray Lithography
Alkali-Developable Silicone-Based Negative Photoresist (SNP) for Deep UV, Electron Beam, and X-Ray Lithographies
Resist Surface Roughness Calculated Using Theoretical Percolation Model
Patterning Characteristics of Hole Patterns in Synchrotron Radiation Lithography
Effects of Synchrotron X-Ray Irradiation on Hot Carrier Reliability in Subquarter-Micrometer NMOSFETs (Special Issue on Sub-Half Micron Si Device and Process Technologies)
X-Ray Phase-Shifting Mask for 0.1-μm Pattern Replication under a Large Proximity Gap Condition
Patterning Characteristics of a Chemically-Amplified Negative Resist in Synchrotron Radiation Lithography
Patterning Characteristics of 0.1-μm Line-and-Space Patternin Synchrotron Radiation Lithography
Proximity Effect on Patterning Characteristics of Hole Patterns in Synchrotron Radiation Lithography

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