MATSUDA Tadahito | NTT LSI Laboratories

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著作論文

Improving X-Ray Mask Pattern Placement Accuracy by Correcting Process Distortion in Electron Beam Writing
Ta/SiN-Stucture X-Ray Masks for Sub-Half-Micron LSIs : Lithography Technology
X-Ray Mask Pattern Accuracy Improvement by Superimposing Multiple Exposures Using Different Field Sizes
Very-Low-Energy Electron Beam Lithography Using a Retarding Field
Simulation of X-Ray Mask Pattern Displacement
A New Proximity Parameter Evaluation Method Utilizing Auxiliary Patterns for Dose Compensation
Spatial Frequency Doubling Method by Image Superimposition for Sub-0.15-μm Optical Lithography
Spatial Frequency Doubling Method for Sub-0.15-μm Optical Lithography
The Effect of an Organic Base in Chemically Amplified Resist on Patterning Characteristics Using KrF Lithography
Metal-Free Acid Generators for Chemically Amplified Monodispersal Polyhydroxystyrene-Based Positive Resist and Post-Exposure Delay Problem
Overlay Repeatability in Mix-and-Match Exposure Using the SR Stepper: SS-1
X-Ray Mask Inspection Using Replicated Resist Patterns
Hole Pattern Fabrication using Halftone Phase-Shifting Masks in KrF Lithography
Characteristics of a Monodisperse PHS-Based Positive Resist (MDPR) in KrF Excimer Laser Lithography
Effects of Synchrotron X-Ray Irradiation on Hot Carrier Reliability in Subquarter-Micrometer NMOSFETs (Special Issue on Sub-Half Micron Si Device and Process Technologies)
Resolution Enhancement of Hole Patterns in Sychrotron Radiation Lithography
Sub-100-nm-Scale Patterning Using a Low-Energy Electron Beam
X-Ray Phase-Shifting Mask for 0.1-μm Pattern Replication under a Large Proximity Gap Condition
Patterning Characteristics of a Chemically-Amplified Negative Resist in Synchrotron Radiation Lithography
Ta/SiN-Structure X-Ray Masks for Sub-Half-Micron LSIs

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