Matsuda T | Ntt Telecommunications Energy Laboratories

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著作論文

Ta/SiN-Stucture X-Ray Masks for Sub-Half-Micron LSIs : Lithography Technology
X-Ray Mask Pattern Accuracy Improvement by Superimposing Multiple Exposures Using Different Field Sizes
Reduction of Image Shortening in Two-Dimensional Pattern Replication Using X-Ray Lithography
Dissolution Characteristics and Surface Morphology of Chemically Amplified Resists in X-Ray Lithography
New Resist Technologies for 0.25-μm Wiring Pattern Fabrication with KrF Lithography
Spatial Frequency Doubling Method by Image Superimposition for Sub-0.15-μm Optical Lithography
Spatial Frequency Doubling Method for Sub-0.15-μm Optical Lithography
The Effect of an Organic Base in Chemically Amplified Resist on Patterning Characteristics Using KrF Lithography
Metal-Free Acid Generators for Chemically Amplified Monodispersal Polyhydroxystyrene-Based Positive Resist and Post-Exposure Delay Problem
Mask Contamination Induced by X-Ray Exposure
Overlay Repeatability in Mix-and-Match Exposure Using the SR Stepper: SS-1
X-Ray Mask Inspection Using Replicated Resist Patterns
Precise Angle and Position Detection Utilizing Optical Interference on Metal-Oxide-Semiconductor-Type Position-Sensitive Detectors
Chemical Composition of Al_2O_3/InP Metal-Insulator-Semiconductor Interfaces Improved by Plasma and Ultraviolet Oxidation
Hole Pattern Fabrication using Halftone Phase-Shifting Masks in KrF Lithography
Characteristics of a Monodisperse PHS-Based Positive Resist (MDPR) in KrF Excimer Laser Lithography
Patterning Characteristics of Hole Patterns in Synchrotron Radiation Lithography
X-Ray Phase-Shifting Mask for 0.1-μm Pattern Replication under a Large Proximity Gap Condition
Patterning Characteristics of a Chemically-Amplified Negative Resist in Synchrotron Radiation Lithography
MOS-Type One-Dimensional Position-Sensitive Detectors with a Linearly Delectable Face of 30 mm Long

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