Patterning Characteristics of Hole Patterns in Synchrotron Radiation Lithography

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1998-04-15

著者

• MOROSAWA Tetsuo

  NTT LSI Laboratories

• MATSUDA Tadahito

  NTT System Electronics Laboratories

• NAKANISHI Kazuya

  NTT System Electronics Laboratories

• DEGUCHI Kimiyoshi

  NTT System Electronics Laboratories

• Nakanishi K

  Ritsumeikan Univ. Kusatsu Jpn

• Matsuda T

  Ntt Telecommunications Energy Laboratories

• Matsuda T

  Tokyo Inst. Technol. Tokyo Jpn

• Deguchi K

  Department Of Electronics And Information Systems Osaka University

関連論文

• Improving X-Ray Mask Pattern Placement Accuracy by Correcting Process Distortion in Electron Beam Writing
• Ta/SiN-Stucture X-Ray Masks for Sub-Half-Micron LSIs : Lithography Technology
• Critical-Dimension Controllability of Chemically Amplified Resists for X-Ray Membrane Mask Fabrication
• Precise Delineation Characteristics of Advanced Electron Beam Mask Writer EB-X3 for Fabricating 1x X-Ray Masks
• X-Ray Mask Fabrication Using New Membrane Process Techniques
• Real-Time Feed-Forward Control LSIs for a Direct Wafer Exposure Electron Beam System
• X-Ray Mask Pattern Accuracy Improvement by Superimposing Multiple Exposures Using Different Field Sizes
• Trap Density Dependent Inelastic Tunneling in Stress-Induced Leakage Current
• Trap Density Dependent Inelastic Tunneling in Stress-Induced Leakage Current
• Sub-100-nm Device Fabrication using Proximity X-Ray Lithography at Five Levels
• Patterning Yield of Sub-100-nm Holes Limited by Fluctuation of Exposure and Development Reactions in Synchrotron Radiation Lithography Using Biased Mask Patterns
• Lithographic Performance of a Chemically Amplified Resist Developed for Synchrotron Radiation Lithography in the Sub-100-nm Region
• Reduction of Image Shortening in Two-Dimensional Pattern Replication Using X-Ray Lithography
• Dissolution Characteristics and Surface Morphology of Chemically Amplified Resists in X-Ray Lithography
• Phantom Exposure of Chemically Amplified Resist in KrF Excimer Laser Lithography
• Effects of photo- and Auger Electron Scattering on Resolution and Linewidth Control in SR Lithography : Lithography Technology
• Effects of Photo- and Auger Electron Scattering on Resolution and Linewidth Control in SR Lithography
• Acoustic Radiation Induced by Intensity Modulated Ion Beam
• Performance of X-Ray Stepper for Next-Generation Lithography
• Deep-Submicron Single-Gate Complementary Metal Oxide Semiconductor (CMOS) Technology Using Channel Preamorphization
• Deep-Submicron Single-Gate CMOS Technology Using Channel Preamorphization
• Simulation of X-Ray Mask Pattern Displacement
• A New Proximity Parameter Evaluation Method Utilizing Auxiliary Patterns for Dose Compensation
• A 100-kV, 100-A/cm^2 Electron Optical System for the EB-X3 X-Ray Mask Writer
• New Resist Technologies for 0.25-μm Wiring Pattern Fabrication with KrF Lithography
• Spatial Frequency Doubling Method by Image Superimposition for Sub-0.15-μm Optical Lithography
• Spatial Frequency Doubling Method for Sub-0.15-μm Optical Lithography
• The Effect of an Organic Base in Chemically Amplified Resist on Patterning Characteristics Using KrF Lithography
• Metal-Free Acid Generators for Chemically Amplified Monodispersal Polyhydroxystyrene-Based Positive Resist and Post-Exposure Delay Problem
• Mask Contamination Induced by X-Ray Exposure
• High Output Power (>20 W) and High Quantum Efficiency in a Photopumped ZnSe/ZnSSe Blue Laser Operating at Room Temperature
• Near-Room-Temperature Photopumped Blue Lasers in ZnS_xSe_/ZnSe Multilayer Structures
• Effect of Mechanical Vibration on Patterning Characteristics in Synchrotron Radiation Lithography
• Overlay Repeatability in Mix-and-Match Exposure Using the SR Stepper: SS-1
• Formation of Aluminium Nitride by Nitrogen-Ion Implantation in Aluminium Single Crystal
• Numerical Analysis of Tunneling Current due to Electric Field Concentration at Gate Edge of Polysilicon/SiO_2/Silicon Structures
• X-Ray Mask Inspection Using Replicated Resist Patterns
• Precise Angle and Position Detection Utilizing Optical Interference on Metal-Oxide-Semiconductor-Type Position-Sensitive Detectors
• Chemical Composition of Al_2O_3/InP Metal-Insulator-Semiconductor Interfaces Improved by Plasma and Ultraviolet Oxidation
• Hole Pattern Fabrication using Halftone Phase-Shifting Masks in KrF Lithography
• Characteristics of a Monodisperse PHS-Based Positive Resist (MDPR) in KrF Excimer Laser Lithography
• Effect of Acid Diffusion on Resolution of a Chemically Amplified Resist in X-Ray Lithography
• Alkali-Developable Silicone-Based Negative Photoresist (SNP) for Deep UV, Electron Beam, and X-Ray Lithographies
• Resist Surface Roughness Calculated Using Theoretical Percolation Model
• Patterning Characteristics of Hole Patterns in Synchrotron Radiation Lithography
• Effects of Synchrotron X-Ray Irradiation on Hot Carrier Reliability in Subquarter-Micrometer NMOSFETs (Special Issue on Sub-Half Micron Si Device and Process Technologies)
• X-Ray Phase-Shifting Mask for 0.1-μm Pattern Replication under a Large Proximity Gap Condition
• Patterning Characteristics of a Chemically-Amplified Negative Resist in Synchrotron Radiation Lithography
• MOS-Type One-Dimensional Position-Sensitive Detectors with a Linearly Delectable Face of 30 mm Long
• Patterning Characteristics of 0.1-μm Line-and-Space Patternin Synchrotron Radiation Lithography
• Proximity Effect on Patterning Characteristics of Hole Patterns in Synchrotron Radiation Lithography

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