Chemical Composition of Al_2O_3/InP Metal-Insulator-Semiconductor Interfaces Improved by Plasma and Ultraviolet Oxidation
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概要
- 論文の詳細を見る
Plasma and ultraviolet (UV) oxidation are used to obtain insulating films for the fabrication of an InP metal-insulator-semiconductor diode. A thin Al film is deposited onto a UV-oxidized n-type InP wafer and the Al film is oxidized with the use of a microwave-excited O_2+N_2 mixture plasma. The depth profile of the composition of the oxidized film is measured by XPS with the aid of Ar ion sputtering. An annealing procedure in N_2-atmosphere followed by H_2-atmosphere annealing was applied to MIS diodes. Resultant InP MIS diodes show excellent C-V characteristics with very small hysteresis. C-V measurements at 1 MHz yield a minimum interface trap density of 6×10^<10> cm^<-2> eV^<-1>.
- 社団法人応用物理学会の論文
- 1994-10-15
著者
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NIU Hirohiko
Department of Electrical Engineering and Computer Sciences, Graduate School of Engineering, Universi
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YOSHIDA Hidetsugu
Institute of Laser Engineering, Osaka University
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MATSUDA Tadahito
NTT System Electronics Laboratories
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YOSHIDA HARUHIKO
Department of Gastroenterology, Faculty of Medicine, University of Tokyo
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Yoshida Hidemi
Thin Films Laboratory Research Center Mitsubishi Kasei Corporation
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MATSUDA TETSURO
Department of Surgery, Soseikai General Hospital
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Matsuda T
Ntt Telecommunications Energy Laboratories
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Matsuda Tetsuro
Department Of Electronics Himeji Institute Of Technology
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Matsuda T
Tokyo Inst. Technol. Tokyo Jpn
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Kishino S
Department Of Electronics Faculty Of Engineering Himeji Institute Of Technology
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Kishino Seigo
Department of Electronics, Faculty of Engineering, Himeji Institute of Technology
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NARA Naoki
Department of Electronics, Faculty of Engineering, Himeji Institute of Technology
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Niu Hirohiko
Department Of Electrical Electronic And Computer Engineering Graduate School Of Engineering Himeji I
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Yoshida Haruhiko
Department Of Gastroenterology Faculty Of Medicine University Of Tokyo
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Nara Naoki
Department Of Electronics Faculty Of Engineering Himeji Institute Of Technology
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Niu Hirohiko
Department of Electronics, Faculty of Engineering, Himeji Institute of Technology
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Yoshida Haruhiko
Department of Electronics, Himeji Institute of Technology, Shosha, Himeji 671-22
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