Chemical Composition of Al_2O_3/InP Metal-Insulator-Semiconductor Interfaces Improved by Plasma and Ultraviolet Oxidation

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概要

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• Plasma and ultraviolet (UV) oxidation are used to obtain insulating films for the fabrication of an InP metal-insulator-semiconductor diode. A thin Al film is deposited onto a UV-oxidized n-type InP wafer and the Al film is oxidized with the use of a microwave-excited O_2+N_2 mixture plasma. The depth profile of the composition of the oxidized film is measured by XPS with the aid of Ar ion sputtering. An annealing procedure in N_2-atmosphere followed by H_2-atmosphere annealing was applied to MIS diodes. Resultant InP MIS diodes show excellent C-V characteristics with very small hysteresis. C-V measurements at 1 MHz yield a minimum interface trap density of 6×10^<10> cm^<-2> eV^<-1>.

• 社団法人応用物理学会の論文
• 1994-10-15

著者

• NIU Hirohiko

  Department of Electrical Engineering and Computer Sciences, Graduate School of Engineering, Universi

• YOSHIDA Hidetsugu

  Institute of Laser Engineering, Osaka University

• MATSUDA Tadahito

  NTT System Electronics Laboratories

• YOSHIDA HARUHIKO

  Department of Gastroenterology, Faculty of Medicine, University of Tokyo

• Yoshida Hidemi

  Thin Films Laboratory Research Center Mitsubishi Kasei Corporation

• MATSUDA TETSURO

  Department of Surgery, Soseikai General Hospital

• Matsuda T

  Ntt Telecommunications Energy Laboratories

• Matsuda Tetsuro

  Department Of Electronics Himeji Institute Of Technology

• Matsuda T

  Tokyo Inst. Technol. Tokyo Jpn

• Kishino S

  Department Of Electronics Faculty Of Engineering Himeji Institute Of Technology

• Kishino Seigo

  Department of Electronics, Faculty of Engineering, Himeji Institute of Technology

• NARA Naoki

  Department of Electronics, Faculty of Engineering, Himeji Institute of Technology

• Niu Hirohiko

  Department Of Electrical Electronic And Computer Engineering Graduate School Of Engineering Himeji I

• Yoshida Haruhiko

  Department Of Gastroenterology Faculty Of Medicine University Of Tokyo

• Nara Naoki

  Department Of Electronics Faculty Of Engineering Himeji Institute Of Technology

• Niu Hirohiko

  Department of Electronics, Faculty of Engineering, Himeji Institute of Technology

• Yoshida Haruhiko

  Department of Electronics, Himeji Institute of Technology, Shosha, Himeji 671-22

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