Application of Lateral Photovoltaic Effect to the Measurement of the Physical Quantities of P-N Junctions : Sheet Resistivity and Junction Conductance of N^+_2 Implanted Si
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概要
- 論文の詳細を見る
A new method of measuring the physical quantities of a thin film p-n junction such as the one formed by ion implantation has been developed ; by means of this method difficulties of making reliable electrical contacts with thin layers and leakage currents which are often encountered when applying the bias voltage can be avoided. Lucovsky's theory for the lateral photovoltaic effect has been extended such that nonzero values for sheet resistivities of both p and n layers and a finite value for the length of the junction are taken into consideration, and the modified theory has been experimentally verified using p-Si samples implanted with N^+_2 at 8 keV. With the aid of the theory, sheet resistivities, junction conductances and some other physical quantities are obtained by analysing the measured lateral photovoltage (LPV). The use of the LPV method together with the ordinary one increases the reliability of the measurement.
- 社団法人応用物理学会の論文
- 1976-04-05
著者
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NIU Hirohiko
Department of Electrical Engineering and Computer Sciences, Graduate School of Engineering, Universi
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TAKAI Munezo
Department of Electronics, Himeji Institute of Technology
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MATSUDA TETSURO
Department of Surgery, Soseikai General Hospital
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Matsuda Tetsuro
Department Of Electronics Himeji Institute Of Technology
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Takai Munezo
Department Of Electronics Himeji Institute Of Technology
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SADAMATSU Hideaki
Department of Electronics, Himeji Institute of Technology
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Niu Hirohiko
Department Of Electrical Electronic And Computer Engineering Graduate School Of Engineering Himeji I
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Sadamatsu Hideaki
Department Of Electronics Himeji Institute Of Technology:(present Address) Central Research Laborato
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