ICTS of MOS Interface States Enhanced by Gold Diffusion
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概要
- 論文の詳細を見る
An enhancement of interface states of Si MOS diode by gold diffusion is observed by the isothermal capacitance transient spectroscopy (ICTS) measurement. The observed ICTS spectra are identified as the interface states with the help of numerical simulation. Although the gold diffusion is accompanied by thermal annealing, the effect of the thermal annealing on the interface states is eliminated with the use of an extra annealing at a low temperature in a nitrogen ambient. It is also ascertained that the interface states enhanced by the gold diffusion increase as the density of diffused gold increases.
- 社団法人応用物理学会の論文
- 1991-07-15
著者
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YOSHIDA Hidetsugu
Institute of Laser Engineering, Osaka University
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Yoshida Hidemi
Thin Films Laboratory Research Center Mitsubishi Kasei Corporation
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Kishino S
Department Of Electronics Faculty Of Engineering Himeji Institute Of Technology
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Kishino Seigo
Department of Electronics, Faculty of Engineering, Himeji Institute of Technology
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Niu Hirohiko
Department Of Electrical Electronic And Computer Engineering Graduate School Of Engineering Himeji I
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Yoshida Haruhiko
Department Of Gastroenterology Faculty Of Medicine University Of Tokyo
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Niu Hirohiko
Department of Electronics, Faculty of Engineering, Himeji Institute of Technology
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Yoshida Haruhiko
Department of Electronics, Himeji Institute of Technology, Shosha, Himeji 671-22
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