Lateral-Photovoltaic Measurement of the Corbino Magnetoresistance of a Very Thin Layer : N^+_2-Implanted Layer on p-Si
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概要
- 論文の詳細を見る
This paper shows that the Corbino magnetoresistances of the p- and n-layers of a junction can be found from the lateral photovoltages (LPV's) measured under a magnetic field. There is no need to supply an external current to the sample in this method, since current-flows can be generated optically by irradiating part of the p-n junction, while the LPV's induced in the p-and n-layers can be measured at the same time. The electrical properties of the n-layer formed by N^+_2-implantation on a p-Si substrate (and of the substrate also) have been studied by this method. The temperature dependence of the magnetoresistance over the range from -41 to 30℃ has shown that the carrier scattering mechanism in the implanted layer cannot be explained in terms of lattice scattering only, while lattice scattering is dominant in the substrate.
- 社団法人応用物理学会の論文
- 1981-02-05
著者
-
Takai Munezo
Department Of Electronics Himeji Institute Of Technology
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Niu Hirohiko
Department Of Electrical Electronic And Computer Engineering Graduate School Of Engineering Himeji I
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