Dynamic Characteristics of the Lateral Photovoltaic Effect and Their Application to the Measurement of Junction Capacitance

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概要

• 論文の詳細を見る

• Characteristics of the dynamic lateral photovoltaic effect when the irradiation intensity is modulated with frequencies between 10〜100 kHz have been investigated experimentally and theoretically, using B-doped Si samples implanted with nitrogen-tons at 8 keV. It has been shown that the amplitude and phase of the lateral photovoltage (LPV) change remarkably as functions of the irradiation position and the modulation frequency, and that from this result junction capacitances can be measured. Besides the junction capacitance, the sheet resistivity and the junction conductance of an individual sample are derived in succession from the measurement of the LPV when the modulation frequency is put at zero. This new method of measurement is useful for checking or investigating junction properties especially when one of the layers of the junction (p or n) is extremely thin as in the present case.

• 社団法人応用物理学会の論文
• 1977-09-05

著者

• OKADA Satoshi

  Department of Molecular and Pharmacological Neuroscience, Graduate School of Biomedical Sciences, Hi

• NIU Hirohiko

  Department of Electrical Engineering and Computer Sciences, Graduate School of Engineering, Universi

• TAKAI Munezo

  Department of Electronics, Himeji Institute of Technology

• MATSUDA TETSURO

  Department of Surgery, Soseikai General Hospital

• Matsuda Tetsuro

  Department Of Electronics Himeji Institute Of Technology

• Takai Munezo

  Department Of Electronics Himeji Institute Of Technology

• Niu Hirohiko

  Department Of Electrical Electronic And Computer Engineering Graduate School Of Engineering Himeji I

• Okada Satoshi

  Department Of Electronics Himeji Institute Of Technology:(present Address) Department Of Electronics

• Okada Satoshi

  Department Of Applied Chemistry And Biotechnology University Of Fukui

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