A Position-Sensitive MOS Device Using Lateral Photovoltaic Effect
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概要
- 論文の詳細を見る
A position-sensitive device (PSD) of MOS is presented which uses for the first time the dependence of the phase of lateral photovoltage on the position of light incident upon the device. The MOS-type PSD presented here has the following advantages over the previously-presented lateral photodiodes: (1) Its sensitivity can be changed electrically by the gate-voltage. (2) No compensation is required for the change in irradiation intensity. A resolution of 1 μm has been demonstrated for an AN-SiO_2-Si PSD to measure the position of light incidence, and better than submicrons should be possible by improving the phase-measurement.
- 社団法人応用物理学会の論文
- 1987-01-20
著者
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NIU Hirohiko
Department of Electrical Engineering and Computer Sciences, Graduate School of Engineering, Universi
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TAKAI Munezo
Department of Electronics, Himeji Institute of Technology
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MATSUDA TETSURO
Department of Surgery, Soseikai General Hospital
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Matsuda Tetsuro
Department Of Electronics Himeji Institute Of Technology
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MAEDA Muneo
Department of Electronics, Himeji Institute of Technology
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Takai Munezo
Department Of Electronics Himeji Institute Of Technology
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AOKI Chihiro
Department of Electronics, Himeji Institute of Technology
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Aoki Chihiro
Department Of Electronics Himeji Institute Of Technology
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Niu Hirohiko
Department Of Electrical Electronic And Computer Engineering Graduate School Of Engineering Himeji I
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