Oxidation of Si by Microwave-Excited Oxygen-Plasma through Protective Al Coating
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概要
- 論文の詳細を見る
An Al film was formed as a protective layer on a Si wafer. Oxidizing species generated in a microwave-excited oxygen-plasma penetrated the Al protective layer under a UV-light irradiation. The depth profile of the chemical composition of the oxidized film was measured by XPS with Ar-ion sputtering. It was found that the UV-light enhances the oxidation rate through a surface excitation. In O_2+N_2 mixture plasma, intermixed-insulator films on Si (SiO_2-Al_2O_3-SiO_2-Si substrate) were prepared by one sequential plasma process. In O_2+H_2 mixture plasma, the inner SiO_2 layer was not recognized.
- 社団法人応用物理学会の論文
- 1986-05-20
著者
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NIU Hirohiko
Department of Electrical Engineering and Computer Sciences, Graduate School of Engineering, Universi
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TAKAI Munezo
Department of Electronics, Himeji Institute of Technology
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MATSUDA TETSURO
Department of Surgery, Soseikai General Hospital
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Matsuda Tetsuro
Department Of Electronics Himeji Institute Of Technology
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MAEDA Muneo
Department of Electronics, Himeji Institute of Technology
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Takai Munezo
Department Of Electronics Himeji Institute Of Technology
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Niu Hirohiko
Department Of Electrical Electronic And Computer Engineering Graduate School Of Engineering Himeji I
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