High Conductive P-Type Films of Si_<100-x>Al_x:H Fabricated by Co-Sputtering and Subsequent Annealing
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概要
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Films of Si_<100-x>Al_x:H have been prepared by reactive co-sputtering and subsequently been annealed at 300〜600℃ in flowing Ar. After annealing, the electrical conductivity of the film has increased by five orders of magnitude, where p-type conductivity of the order of 10^0Ω^<-1>cm^<-1> has been obtained when x=10〜19. X-ray diffraction has shown that the remarkable increase in the conductivity is closely related to partial crystallization of Si. Also measurements of infrared and optical absorption spectra for this system have been made.
- 社団法人応用物理学会の論文
- 1984-01-20
著者
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NIU Hirohiko
Department of Electrical Engineering and Computer Sciences, Graduate School of Engineering, Universi
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SHIKAMA Tomokazu
Department of Electronics, Himeji Institute of Technology
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TAKAI Munezo
Department of Electronics, Himeji Institute of Technology
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MATSUDA TETSURO
Department of Surgery, Soseikai General Hospital
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Matsuda Tetsuro
Department Of Electronics Himeji Institute Of Technology
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Takai Munezo
Department Of Electronics Himeji Institute Of Technology
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YOSHIZAWA Izuru
Department of Electronics, Himeji Institute of Technology
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Niu Hirohiko
Department Of Electrical Electronic And Computer Engineering Graduate School Of Engineering Himeji I
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Shikama Tomokazu
Department Of Electronics Himeji Institute Of Technology
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Yoshizawa Izuru
Department Of Electronics Himeji Institute Of Technology
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