Negative Resistance and Relaxation Effect of Conductivity in Photoconductive CdS at Low Temperature
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概要
- 論文の詳細を見る
Negative resistance phenomena are observed in CdS single crystal at temperatures below 222°K and at conductivities larger than 10^<-3>(Ω cm)^<-1>. We are interested here in the change of conductivity σ(t) after sudden removal of the high electric field which caused the negative resistance. The relaxation time of conductivity is very long ranging from a few seconds to several tens seconds and varying linearly with the inverse of conductivity. The relaxation time versus 1/T curve has a kink point at 222°K; this temperature coincides with the critical temperature below which the negative resistance can be observed. From measurements of the spatial distribution of relaxation time and electric field it is found that the negative resistance is not caused by the inhomogeneity but by the decrease of the number of carriers in the sample.
- 社団法人応用物理学会の論文
- 1968-09-05
著者
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Niu Hirohiko
Department Of Electrical Engineering The Faculty Of Engineering Kobe University
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Yamamoto Keiichi
Department Of Biology Chiba University
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Niu Hirohiko
Department Of Electrical Electronic And Computer Engineering Graduate School Of Engineering Himeji I
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Abe Kenji
Department Of Biochemistry 1 Hamamatsu University School Of Medicine
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Yamamoto Keiichi
Department Of Electrical Engineering The Faculty Of Engineering Kobe University
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