Study of Anneal Behaviors of N^+_2 -Implanted p-Si by Means of a Lateral Photovoltaic Method
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概要
- 論文の詳細を見る
Behaviors of P-Si implanted with N^+_2at 8 keV, I.e.the sheet resistivity P_n/W_n of the implanted layer and the junction conductance g as functions of annealing temperature(530-780℃), have been measured by the lateral photovoltaic(LPV)method, and have been analyzed with the aid of an equivalent circuit representing the LPV effect.Since this LPV method does not require electrical contacts on the implanted layer, harmful interactions between the contacts and this extremely thin layer can be avoided. The measurement has shown that with increasing annealing temperature, P_n/W_n settles down to a nearly constant value after an initial sharp decrease;while, g on the whole continues to increase.These behaviors have been attributed dominantly to the increase of trap concentrations with increasing temperature, and thus reverse annealing has been suggested to occur even at a temperature of 530℃.
- 社団法人応用物理学会の論文
- 1978-11-05
著者
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Takai Munezo
Department Of Electronics Himeji Institute Of Technology
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Niu Hirohiko
Department Of Electrical Electronic And Computer Engineering Graduate School Of Engineering Himeji I
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MATUDA Tetsuro
Department of Electronics, Himeji Institute of Technology,
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Matuda Tetsuro
Department Of Electronics Himeji Institute Of Technology
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NIU Hirohiko
Department of Electronics, Himeji Institute of Technology,
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TAKAI Munezo
Department of Electronics, Himeji Institute of Technology,
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