X-Ray Mask Fabrication Using New Membrane Process Techniques
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1997-12-30
著者
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OHKI Shigehisa
NTT Advanced Technology Corp.
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ODA Masatoshi
NTT LSI Laboratories
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MOROSAWA Tetsuo
NTT LSI Laboratories
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OHKI Shigehisa
NTT LSI Laboratories
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Ohki S
Ntt Telecommunications Energy Laboratories
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MATSUDA Tadahito
NTT Telecommunications Energy Laboratories
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ODA Masatoshi
NTT Telecommunications Energy Laboratories
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UCHIYAMA Shingo
NTT System Electronics Laboratories
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ODA Masatoshi
NTT System Electronics Laboratories
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MATSUDA Tadahito
NTT System Electronics Laboratories
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Uchiyama S
Hamamatsu Photonics K.k. Shizuoka Jpn
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Uchiyama S
Nagoya University
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Uchiyama S
Canon Inc. Utsunomiya Jpn
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Uchiyama Susumu
Department Of Electronics Nagoya University
関連論文
- Improving X-Ray Mask Pattern Placement Accuracy by Correcting Process Distortion in Electron Beam Writing
- Tantalum Dry-Etching Characteristics for X-Ray Mask Fabrication
- Simulation of X-Ray Mask Distortion
- Ta Film Properties for X-Ray Mask Absorbers : Lithography Technology
- Ta Film Properties for X-Ray Mask Absorbers
- Ta/SiN-Stucture X-Ray Masks for Sub-Half-Micron LSIs : Lithography Technology
- High-Precision X-Ray Mask Technology : Lithography Technology
- Critical-Dimension Controllability of Chemically Amplified Resists for X-Ray Membrane Mask Fabrication
- Precise Delineation Characteristics of Advanced Electron Beam Mask Writer EB-X3 for Fabricating 1x X-Ray Masks
- X-Ray Mask Fabrication Using New Membrane Process Techniques
- Real-Time Feed-Forward Control LSIs for a Direct Wafer Exposure Electron Beam System
- X-Ray Mask Pattern Accuracy Improvement by Superimposing Multiple Exposures Using Different Field Sizes
- Giant Magnetoresistance in FeNiCo/Cu Multilayers
- Electron Cyclotron Resonance Plasma Etching of α-Ta for X-Ray Mask Absorber Using Chlorine and Fluoride Gas Mixture
- Etching Characteristics of α-Type Ta Film Using Cl_2 Electron Cyclotron Resonance(ECR)Plasma
- Development of Highly Accurate X-Ray Mask with High-Density Patterns
- Analysis of Domain Wall Motion under Influence of Magneto-Elastic Coupling in Orthoferrite
- Analysis of One-Dimensional Domain Wall Motion under a Biased In-Plane Field
- Automotion Properties of Fast σ Bubble
- Anisotropie Bubble Domain Mobility in Orthoferrite
- Magnetostriction and Perpendicular Magnetic Anisotropy of Amorphous GdFeCo Thin Films : Magnetism, Magnetic Materials Devices
- Preparation, Magnetic and Magneto-Optic Properties of Small-Crystallite MnBi Films
- Perpendicular Magnetic Anisotropy of TbCo Films
- Measurement of Magnetostriction of Amorphous Dy-Fe Films by Cantilever Capacitance Method
- Magnetostriction of Amorphous Gd-Fe and Tb-Fe Sputtered Films
- Magnetic Torque in Gd-Co Film with Layer Structure
- Hall Effects in MnBi Films
- Thickness Dependence of Magnetic Annealing Behavior in Permalloy Films
- Influence of Wall Coercivity on Magnetization Process of Stripe Domain in MnBi Films
- Annealing Behavior of As-Deposited Permalloy Films
- Relaxation Process of M-Induced Uniaxaial Magnetic Anisotropy
- Magnetic Coupling between Two Ni-Fe Layers Separated by SiO Intermediate Layer
- On Temperature Dependence of Anisotropy Dispersion in Ni-Fe Thin Films
- Origin of the Periodic Component of Anisotropy Dispersion in Ni-Fe Films II
- Giant Magnetoresistance Effect in Amorphous CoFeB Sandwiches
- Giant Magnetoresistance with Low Saturation Field in Ni_Fe_Co_/Cu Multilayers
- Structure and Soft Magnetic Properties of Fe/CoZr Multilayer Films
- Sub-100-nm Device Fabrication using Proximity X-Ray Lithography at Five Levels
- Patterning Yield of Sub-100-nm Holes Limited by Fluctuation of Exposure and Development Reactions in Synchrotron Radiation Lithography Using Biased Mask Patterns
- Lithographic Performance of a Chemically Amplified Resist Developed for Synchrotron Radiation Lithography in the Sub-100-nm Region
- Reduction of Image Shortening in Two-Dimensional Pattern Replication Using X-Ray Lithography
- Dissolution Characteristics and Surface Morphology of Chemically Amplified Resists in X-Ray Lithography
- Kerr Rotation of Quenched High-Temperature-Phase MnBi Film
- Measurement of Magnetostriction Constants in (111)-Oriented Polycrystalline PdCo Alloy and Multilayered Films
- Magneto-Optical Kerr Spectra of Ultrathin Co Films
- Dynamics of an Isolated Stripe Domain in Bubble Film
- Dynamic Properties of Isolated Straight Stripe Domain in Rate Earth Iron Great Film
- A 0.25-μm BiCMOS Technology Using SOR X-Ray Lithography (Special Issue on Quarter Micron Si Device and Process Technologies)
- Simulation of X-Ray Mask Pattern Displacement
- A New Proximity Parameter Evaluation Method Utilizing Auxiliary Patterns for Dose Compensation
- A 100-kV, 100-A/cm^2 Electron Optical System for the EB-X3 X-Ray Mask Writer
- New Resist Technologies for 0.25-μm Wiring Pattern Fabrication with KrF Lithography
- Spatial Frequency Doubling Method by Image Superimposition for Sub-0.15-μm Optical Lithography
- Spatial Frequency Doubling Method for Sub-0.15-μm Optical Lithography
- The Effect of an Organic Base in Chemically Amplified Resist on Patterning Characteristics Using KrF Lithography
- Metal-Free Acid Generators for Chemically Amplified Monodispersal Polyhydroxystyrene-Based Positive Resist and Post-Exposure Delay Problem
- High Transparent Sheet Polarizer Made with Birefringent Materials
- Microstructures of Pt/Co Films Deposited on Sputter-Etched Underlayers
- Mask Contamination Induced by X-Ray Exposure
- Peak Velocity in Orthorhombic Bubble Films
- Overlay Repeatability in Mix-and-Match Exposure Using the SR Stepper: SS-1
- X-Ray Mask Inspection Using Replicated Resist Patterns
- Precise Angle and Position Detection Utilizing Optical Interference on Metal-Oxide-Semiconductor-Type Position-Sensitive Detectors
- Chemical Composition of Al_2O_3/InP Metal-Insulator-Semiconductor Interfaces Improved by Plasma and Ultraviolet Oxidation
- Hole Pattern Fabrication using Halftone Phase-Shifting Masks in KrF Lithography
- Characteristics of a Monodisperse PHS-Based Positive Resist (MDPR) in KrF Excimer Laser Lithography
- Patterning Characteristics of Hole Patterns in Synchrotron Radiation Lithography
- X-Ray Phase-Shifting Mask for 0.1-μm Pattern Replication under a Large Proximity Gap Condition
- Patterning Characteristics of a Chemically-Amplified Negative Resist in Synchrotron Radiation Lithography
- MOS-Type One-Dimensional Position-Sensitive Detectors with a Linearly Delectable Face of 30 mm Long
- High-Precision X-Ray Mask Technology
- Sub-100-nm Device Fabrication using Proximity X-Ray Lithography at Five Levels
- Ta/SiN-Structure X-Ray Masks for Sub-Half-Micron LSIs
- Electron Cyclotron Resonance Plasma Etching of $\alpha$-Ta for X-Ray Mask Absorber Using Chlorine and Fluoride Gas Mixture