ODA Masatoshi | NTT LSI Laboratories

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概要

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著作論文

Improving X-Ray Mask Pattern Placement Accuracy by Correcting Process Distortion in Electron Beam Writing
Tantalum Dry-Etching Characteristics for X-Ray Mask Fabrication
Simulation of X-Ray Mask Distortion
Ta Film Properties for X-Ray Mask Absorbers : Lithography Technology
Ta Film Properties for X-Ray Mask Absorbers
Ta/SiN-Stucture X-Ray Masks for Sub-Half-Micron LSIs : Lithography Technology
Precise Delineation Characteristics of Advanced Electron Beam Mask Writer EB-X3 for Fabricating 1x X-Ray Masks
X-Ray Mask Fabrication Using New Membrane Process Techniques
Sub-100-nm Device Fabrication using Proximity X-Ray Lithography at Five Levels
Patterning Yield of Sub-100-nm Holes Limited by Fluctuation of Exposure and Development Reactions in Synchrotron Radiation Lithography Using Biased Mask Patterns
Lithographic Performance of a Chemically Amplified Resist Developed for Synchrotron Radiation Lithography in the Sub-100-nm Region
Reduction of Image Shortening in Two-Dimensional Pattern Replication Using X-Ray Lithography
Dissolution Characteristics and Surface Morphology of Chemically Amplified Resists in X-Ray Lithography
Simulation of X-Ray Mask Pattern Displacement
Ta/SiN-Structure X-Ray Masks for Sub-Half-Micron LSIs

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