IBA Yoshihisa | Fujitsu Laboratories Ltd.

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著作論文

Sub-100-nm Device Fabrication using Proximity X-Ray Lithography at Five Levels
High-Performance X-Ray Mask Fabrication Using TaGeN Absorber and Dummy Pattern Method for Sub-100nm Proximity X-Ray Lithography : Instrumentation, Measurement, and Fabrication Technology
Pattern Etching of Ta X-ray Mask Absorber on SiC Membrane by Inductively Coupled Plasma
Etching Residues of Sputtered Ta Film Using Chlorine-Based Plasma
Precise Stress Control of Ta Absorber using Low Stress Alumima Etching Mask for X-Ray Mask Fabrication
Amorphous Refractory Compound Film Material for X-Ray Mask Absorbers
Pattern Fabrication Technique for Ta-Ge Amorphous X-Ray Absorber on a SiC Membrane by Inductively Coupled Plasma
Effects of Etch Rate on Plasma-Induced Damage to Porous Low-$k$ Films
Sub-100-nm Device Fabrication using Proximity X-Ray Lithography at Five Levels

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