Amorphous Refractory Compound Film Material for X-Ray Mask Absorbers

概要

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We proposed that the stress of the side walls of an absorber pattern causes the pattern distortion of an X-ray mask. The surfaces of the pattern side walls have a high compressive stress layer because they are easily oxidized in air after absorber pattern etching. This stress becomes a serious problem in proportion to the high degree of pattern integration. To lower the surface oxide layer stress of the film, we developed a TaGe nitride (TaGeN) absorber. The oxide layer stress of TaGeN films becomes lower with increasing the N_2 content in the sputtering gas, and the stress value of Ta_<0.35>Ge_<0.20>N_<0.45> can be decreased to 1/17 that of TaGe. We fabricated a TaGeN X-ray mask and practically demonstrated that the TaGeN absorber was effective for high image placement accuracy to an X-ray mask having high dense patterns with a 0.1μm pattern size.
社団法人応用物理学会の論文
2000-09-15