Pattern Fabrication Technique for Ta-Ge Amorphous X-Ray Absorber on a SiC Membrane by Inductively Coupled Plasma

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We developed a pattern etching method for Ta-Ge (Ta_3Ge) amorphous X-ray absorbers on a SiC membrane using a mixture of Cl_2 and BCl_3 gases with a single-layer e-beam resist. For this work, an inductively coupled plasma (ICP) etcher with a helium back surface cooling system was used. High etching selectivity and anistropic etching were achieved by regulating electrode temperature and BCl_3 concentration ratio. The etching selectivity of Ta_3Ge to the resist is 6.5. Ta_3Ge patterns of 0.1μm dimensions with vertical sidewalls were fabricated. Good etching rate uniformity was also obtained over a 61-mm-diameter membrane field. We found that Ru film was a suitable etching stopper material because it has high dry-etching durability and can be easily removed by oxygen plasma etching.
社団法人応用物理学会の論文
1999-04-15