Taguchi T | Department Of Electrical And Electronic Engineering Yamaguchi University

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著作論文

Threshold Current Density in ZnS/MgBeZnS Quantum Well Ultraviolet Lasers
Development of White Light Emitting Diodes by Multi-layered Red, Green, and Bule Phosphors Excited by Near-ultraviolet Light Emitting Diodes
Near-ultraviolet LED of the External Quantum Efficiency Over 45% and its Application to High-color Rendering Phosphor Conversion White LEDs
Proton Transfer to Melamine Crosslinkers in X-Ray Chemically Amplified Negative Resists Studied by Time-Resolved and Steady-State Optical Absorption Measurement
High-Density Recording Characteristics of a 90 mm Phase-Change Optical Disk
Transient Species Induced in X-ray Chemically Amplified Positive Resists:Post-Exposure Delay Effect
Fabrication of 0.1μm Line-and-Space Patterns using Soft X-Ray Reduction Lithography
Sub-0.1 μm Resist Patterning in Soft X-Ray (13 nm) Projection Lithography
Alternative Interpretation of Impulse Response of Phonon-Polaritons
Excitation of Phonon-Polaritons with Asymmetric Transient Grating
Dependence of Light Extraction From Near-Ultraviolet Light-Emitting Diodes on Refraction Index, Transmittance and Shape
Biexciton Luminescence from GaN Epitaxial Layers
Time-Resolved Observation of Laser-Induced Surface Reaction for Si/Cl_2 System Using Second-Harmonic Generation
Excitonic Emission in GaN Films on AlN Substrates Using Microwave-Excited N Plasma Method
Observation of Etching Reaction for Si/XeF_2 System Using Second-Harmonic Generatiorn
Sub-100-nm Device Fabrication using Proximity X-Ray Lithography at Five Levels
Study on the Luminous and Thermal Characteristics of High-Power Near-Ultraviolet LED Packages with Various Chip Arrangements
Development of Light Sources by Large-Scale Integrated Light-Emitting Diodes
Analysis of Chip/Bump/Ceramic Interface of Flip-Chip Bonded LED Directly on Ceramic Packages
Structural Characterization of High-Quality ZnS Epitaxial Layers Grown on GaAs Substrates by Low-Pressure Metalorganic Chemical Vapor Deposition : Surfaces, Interfaces, and Films
Temperature Dependence of Free-Exciton Ltuninescence from High-Quality ZnS Epitaxial Layers
Optical characterization of high-quality ZnS epitaxial films grown by low-pressure metalorganic chemical vapor deposition
Reduction of Inhomogeneous Broadening of Exciton Luminescence in Cd_xZn_Se Ternary Alloys and Cd_xZn_Se-ZnSe Multiple Quantum Wells Grown by Molecular-Beam Epitaxy under Se-Excess Supply
High-Performance X-Ray Mask Fabrication Using TaGeN Absorber and Dummy Pattern Method for Sub-100nm Proximity X-Ray Lithography : Instrumentation, Measurement, and Fabrication Technology
Evaluation of Overlay Accuracy for 100-nm Ground Rule in Proximity X-Ray Lithography
Performance of X-Ray Stepper for Next-Generation Lithography
Pattern Etching of Ta X-ray Mask Absorber on SiC Membrane by Inductively Coupled Plasma
Precise Stress Control of Ta Absorber using Low Stress Alumima Etching Mask for X-Ray Mask Fabrication
Homoepitaxial Growth of GaN Layers by Reactive Molecular-Beam Epitaxy on Bulk GaN Single Crystals Prepared by Pressure-Controlled Solution Growth
Effect of Cooling Process after GaN Epitaxial Growth by Radio-Frequency Molecular Beam Epitaxy : Semiconductors
Effects of Hg Annealing on Photoluminescence Spectra of CdTe Crystals and MOCVD-Grown CdTe/GaAs Films
Performance of a 600 Mbyte 90 mm Phase-Change Optical Disk against Disk Tilt
60GHz mixer MMIC for millimeter wave radar
Critical Layer Thickness of n-In_Al_AS/In_Ga_As/In_Al_AS Pseudomorphic Heterostructures Studied by Photoluminescence
Fabrication and Illuminance Properties of Phosphor-conversion Green Light-emitting Diode with a Luminous Efficacy over 100 lm/W
Exciton Binding Energy under Electric Field in ZnTe1-xSx/ZnS Strained-Layer Superlattices
Valence Band Structure and Optical Gain in Cd_xZn_/ZnS Quantum Wells : Short Note

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