Shoji Tadayoshi | Department Of Electronics Tohoku Institute Of Technology
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概要
関連著者
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Shoji Tadayoshi
Department Of Electronics Tohoku Institute Of Technology
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Taguchi Tsunemasa
Department Of Electrical And Electronic Engineering Faculty Of Engineering Yamaguchi University
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Onodera Chikara
Electronic Engineering Course, Aomori Prefectural Hachinohe Technical Senior High School, 1-2-27 Koyo, Hachinohe, Aomori 031-0801, Japan
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ONODERA Chikara
Electronic Engineering Course, Aomori Prefectural Towada Technical Senior High School
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Hiratate Yukio
Department Of Electronics Tohoku Institute Of Technology
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SHOJI Tadayoshi
Department of Electronics, Tohoku Institute of Technology
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Yoshida Masaaki
Electronic Devices Company Ricoh Co. Ltd.
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TAGUCHI Tsunemasa
Department of Electrical and Electronic Engineering, Yamaguchi University
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TAGUCHI Takao
SORTEC Corporation
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Taguchi T
Research Laboratories Nippondenso Co. Ltd.
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Shoji T
Department Of Electronics Tohoku Institute Of Technology
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小野寺 力
Electronic Engineering Course Aomori Prefectural Towada Technical Senior High School
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TAGUCHI Takao
ASET Super-fine SR Lithography Laboratory
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Taguchi T
Department Of Electrical And Electronic Engineering Yamaguchi University
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Taguchi Tsunemasa
Department of Electrical and Electronic Engineering, Yamaguchi University, 2-16-1 Tokiwadai, Ube, Yamaguchi 755-8611, Japan
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Shoji Tadayoshi
Department of Electronics, Tohoku Institute of Technology, 35-1 Yagiyama Kasumi-cho Taihaku-ku, Sendai 982-8577, Japan
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Onodera Chikara
Electronic Engineering Course, Aomori Prefectural Towada Technical Senior High School, 215-1 Shimotai Sanbongi, Towada, Aomori 034-0001, Japan
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小野寺 力
青森県立十和田工業高等学校
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YOSHIDA Masaaki
Department of Electrical and Computer Engineering, Hachinohe National College of Technology
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Yoshida Masaaki
Department Of Electrical And Computer Engineering Hachinohe National College Of Technology
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Shoji Tadayoshi
Department Of Physics
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HIRATATE Yukio
Department of Electronics, Tohoku Institute of Technology
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Hiratate Y
Department Of Electronics Tohoku Institute Of Technology
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Yoshida Masaaki
Department Of Applied Chemistry Faculty Of Engineering Utsunomiya University
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Shoji Tadayoshi
Department of Electronics, Tohoku Institute of Technology, 35-1 Yagiyama Kasumi-cho, Taihaku-ku, Sendai 982-8577, Japan
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Hiratake Yukio
Department of Electronics, Tohoku Institute of Technology, 35-1 Yagiyama Kasumi-cho, Taihaku-ku, Sendai 982-8577, Japan
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Hiratate Yukio
Department of Electronics, Tohoku Institute of Technology, 35-1 Yagiyama Kasumi-cho, Taihaku-ku, Sendai 982-8577, Japan
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Hiratate Yukio
Department of Electronics, Tohoku Institute of Technology, 35-1 Yagiyama Kasumi-cho Taihaku-ku, Sendai 982-8577, Japan
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Yoshida Masaaki
Electronic Engineering Course, Aomori Prefectural Towada Technical Senior High School, 215-1 Shimotai Sanbongi, Towada, Aomori 034-0001, Japan
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Shoji Tadayoshi
Department of Electronics, Tohoku Institute of Technology, Sendai 982-8577, Japan
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Onodera Chikara
Electronic Engineering Course, Aomori Prefectural Towada Technical Senior High School, Towada, Aomori 034-0001, Japan
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Taguchi Tsunemasa
Department of Electrical and Electronic Engineering, Yamaguchi University, Ube, Yamaguchi 755-8611, Japan
著作論文
- Threshold Current Density in ZnS/MgBeZnS Quantum Well Ultraviolet Lasers
- CdTe(Cl) Radiation Detector Operating at Room Temperature(Abstracts of Doctral Dissertations)
- Exciton Binding Energy under Electric Field in ZnTe1-xSx/ZnS Strained-Layer Superlattices
- Effects of Dielectric Confinement on Exciton Binding Energies in ZnSe/MgxBeyZn1-x-ySe Quantum Wells
- Estimation of Effective Band Gap Energy of CdxZn1-xS/ZnS Multiple Quantum Wells Lattice-Matched to GaP Substrates
- Band Offset Dependence of Exciton Binding Energy in CdxZn1-xS/ZnS Quantum Wells
- Proposal for ZnS/Mg xBeyZn1-x-yS Quantum Wells
- Estimation of Band Lineups and Optical Gains in CdxZn1-xS/MgyZn1-yS Quantum Wells
- Reduction in Induced Strain in CdxZn1-xS Well Layers Using ZnS1-ySey Barrier Layers and Inhibition of Induced Strain due to Lattice Mismatch between MgzZn1-zS Cladding Layers and CdxZn1-xS/ZnS1-ySey Multiple Quantum Wells by Adjusting Mg Content
- Effect of Induced Strain on Band Lineups in CdxZn1-xS/ZnS/BeyZn1-yS Separate-Confinement Heterostructures
- Effect of Induced Strain Due to Lattice Mismatch between MgyZn1-yS Cladding Layers and CdxZn1-xS/ZnS Quantum Wells on Effective Band Gap Energy in CdxZn1-xS/ZnS/MgyZn1-yS Separate-Confinement Heterostructures
- Excitonic Properties in CdxZn1-xS/ZnS Quantum Wells
- Effect of Image Charge on Exciton Binding Energy in ZnS/BexZn1-xS Quantum Wells
- Design of Band Lineups and Optical Gains in CdxZn1-xS/CdyZn1-yS Multiple Quantum Wells Lattice-Matched to GaAs Substrates
- Effect of Induced Strain on Valence Band in CdxZn1-xS Wells of CdxZn1-xS/ZnS/BeyZn1-yS Separate-Confinement Heterostructures
- Exciton Binding Energies in Cd0.11Zn0.89S/Mg0.22Zn0.78S Quantum Wells Lattice-Matched to GaP Substrates
- Proposal for BexZn1-xS Barrier Layers Combined with ZnS Wells