Estimation of Effective Band Gap Energy of CdxZn1-xS/ZnS Multiple Quantum Wells Lattice-Matched to GaP Substrates
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概要
- 論文の詳細を見る
The average lattice constant of CdxZn1-xS/ZnS multiple quantum wells (MQWs) can be matched to that of GaP at a cadmium (Cd) content ($x$) in the range of 0.2–0.35. The induced strain in the CdxZn1-xS well of the CdxZn1-xS/ZnS MQWs lattice-matched to GaP is smaller than that in CdxZn1-xS/ZnS MQW with a ZnS buffer layer on a GaAs substrate. Effective band gap energy increases in the former compared with that in the latter.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 2004-06-15
著者
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ONODERA Chikara
Electronic Engineering Course, Aomori Prefectural Towada Technical Senior High School
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Shoji Tadayoshi
Department Of Electronics Tohoku Institute Of Technology
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Taguchi Tsunemasa
Department Of Electrical And Electronic Engineering Faculty Of Engineering Yamaguchi University
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Hiratate Yukio
Department Of Electronics Tohoku Institute Of Technology
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Taguchi Tsunemasa
Department of Electrical and Electronic Engineering, Yamaguchi University, 2-16-1 Tokiwadai, Ube, Yamaguchi 755-8611, Japan
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Onodera Chikara
Electronic Engineering Course, Aomori Prefectural Hachinohe Technical Senior High School, 1-2-27 Koyo, Hachinohe, Aomori 031-0801, Japan
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