Design of Band Lineups and Optical Gains in CdxZn1-xS/CdyZn1-yS Multiple Quantum Wells Lattice-Matched to GaAs Substrates
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概要
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We have performed a theoretical study of band lineups and optical gains in CdxZn1-xS/CdyZn1-yS multiple quantum wells (MQWs). The valence band offset depends greatly on well and barrier widths. The average lattice constant of CdxZn1-xS/CdyZn1-yS MQWs is controlled by well and barrier widths and alloy compositions in well and barrier layers, and it can be matched to the lattice constant of the GaAs substrates. The effective band-gap is changed around the blue-green spectral range under the lattice matching condition between CdxZn1-xS/CdyZn1-yS MQWs and GaAs substrates. Positive optical gain is obtained at the carrier concentration of $n=7\times 10^{18}$ cm-3 in CdxZn1-xS/CdyZn1-yS MQWs at $x=0.7$, $y=0.5$ and room temperature (RT).
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2004-03-15
著者
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Shoji Tadayoshi
Department Of Electronics Tohoku Institute Of Technology
-
Taguchi Tsunemasa
Department Of Electrical And Electronic Engineering Faculty Of Engineering Yamaguchi University
-
Hiratate Yukio
Department Of Electronics Tohoku Institute Of Technology
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Onodera Chikara
Electronic Engineering Course, Aomori Prefectural Hachinohe Technical Senior High School, 1-2-27 Koyo, Hachinohe, Aomori 031-0801, Japan
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