Effect of Induced Strain Due to Lattice Mismatch between MgyZn1-yS Cladding Layers and CdxZn1-xS/ZnS Quantum Wells on Effective Band Gap Energy in CdxZn1-xS/ZnS/MgyZn1-yS Separate-Confinement Heterostructures
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概要
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We calculate the effect of the induced strain due to lattice mismatch between CdxZn1-xS/ZnS quantum wells (QWs) and MgyZn1-yS cladding layers on the effective band gap energy in CdxZn1-xS/ZnS/MgyZn1-yS separate-confinement heterostructures (SCHs). The effective band gap energy in the CdxZn1-xS/ZnS/MgyZn1-yS SCHs increases with increasing Mg content ($y$) for wider wells. The variation in effective band gap energy reflects the peak energy of optical gain spectra. The effect of the induced strain due to MgyZn1-yS cladding layers on the threshold carrier concentration for the production of a positive optical gain is very weak. The lattice-matching condition for the MgyZn1-yS cladding layers with respect to the CdxZn1-xS/ZnS MQWs is estimated. The induced strain due to the lattice mismatch between MgyZn1-yS cladding layers and CdxZn1-xS/ZnS MQWs is suppressed by adjusting $y$.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2005-07-15
著者
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ONODERA Chikara
Electronic Engineering Course, Aomori Prefectural Towada Technical Senior High School
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Shoji Tadayoshi
Department Of Electronics Tohoku Institute Of Technology
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Taguchi Tsunemasa
Department Of Electrical And Electronic Engineering Faculty Of Engineering Yamaguchi University
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Hiratake Yukio
Department of Electronics, Tohoku Institute of Technology, 35-1 Yagiyama Kasumi-cho, Taihaku-ku, Sendai 982-8577, Japan
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Onodera Chikara
Electronic Engineering Course, Aomori Prefectural Hachinohe Technical Senior High School, 1-2-27 Koyo, Hachinohe, Aomori 031-0801, Japan
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