Effect of Induced Strain on Band Lineups in CdxZn1-xS/ZnS/BeyZn1-yS Separate-Confinement Heterostructures
スポンサーリンク
概要
- 論文の詳細を見る
We have performed a theoretical study of conduction and valence band offsets and effective band gap energy in CdxZn1-xS/ZnS/BeyZn1-yS separate-confinement heterostructures (SCHs). Valence band offset increases slightly with increasing Be content ($y$) in CdxZn1-xS/ZnS/BeyZn1-yS SCHs. The variation in effective band gap energy on threshold carrier concentration for production of a positive optical gain is very slight. We indicate that the BeyZn1-yS cladding layer is useful for the fabrication of optoelectric devices based on CdxZn1-xS/ZnS quantum wells (QWs).
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2007-01-15
著者
-
ONODERA Chikara
Electronic Engineering Course, Aomori Prefectural Towada Technical Senior High School
-
Shoji Tadayoshi
Department Of Electronics Tohoku Institute Of Technology
-
Taguchi Tsunemasa
Department Of Electrical And Electronic Engineering Faculty Of Engineering Yamaguchi University
-
Hiratate Yukio
Department Of Electronics Tohoku Institute Of Technology
関連論文
- Threshold Current Density in ZnS/MgBeZnS Quantum Well Ultraviolet Lasers
- Biexciton Luminescence from GaN Epitaxial Layers
- Excitonic Emission in GaN Films on AlN Substrates Using Microwave-Excited N Plasma Method
- Excitonic Emissions under High Excitation of Hexagonal GaN Single Crystal Grown by Sublimation Method
- Structural Characterization of High-Quality ZnS Epitaxial Layers Grown on GaAs Substrates by Low-Pressure Metalorganic Chemical Vapor Deposition : Surfaces, Interfaces, and Films
- Internal Quantum Efficiency of Nitride-based Light-Emitting Diodes
- Temperature Dependence of Free-Exciton Ltuninescence from High-Quality ZnS Epitaxial Layers
- Optical characterization of high-quality ZnS epitaxial films grown by low-pressure metalorganic chemical vapor deposition
- Reduction of Inhomogeneous Broadening of Exciton Luminescence in Cd_xZn_Se Ternary Alloys and Cd_xZn_Se-ZnSe Multiple Quantum Wells Grown by Molecular-Beam Epitaxy under Se-Excess Supply
- Effect of High Current Injection on the Blue Radiative Recombination in InGaN Single Quantum Well Light Emitting Diodes
- Homoepitaxial Growth of GaN Layers by Reactive Molecular-Beam Epitaxy on Bulk GaN Single Crystals Prepared by Pressure-Controlled Solution Growth
- Effect of Cooling Process after GaN Epitaxial Growth by Radio-Frequency Molecular Beam Epitaxy : Semiconductors
- Band Offsets in CdZnS/ZnS Strained-Layer Quantum Well and Its Application to UV Laser Diode
- Structural and Photoluminescence Characterization of CdS/GaAs Films and CdS-ZnS Strained-Layer Superlattices Grown by Low-Pressure MOCVD Method : III-V Compound Semiconductors Devices and Materials(Solid State Devices and Materials 1)
- Temperature and Composition Dependences on the Electrical Properties of As-grown ZnHgTe Crystals Grown by the Travelling Heater Method : Semiconductors and Semiconductor Devices
- Effect of Annealing on Photoluminescence Properties in Ar^+-Ion Irradiated MOCVD-Grown ZnSe Films : Semiconductors and Semiconductor Devices
- Preparation and Ion-Beam-Induced Luminescence of Thermal CVD Diamond
- Bound-Exciton and Edge-Emission Spectra Associated with Li and Na Acceptors in ZnSe
- Effects of Hg Annealing on Photoluminescence Spectra of CdTe Crystals and MOCVD-Grown CdTe/GaAs Films
- A Measurement of the Spin Correlation Coefficient C_ in p-p Scattering at 52 MeV
- Growth by Travelling Heater Method and Chracteristic of Undoped High-Resistivity CdTe
- High Purity CdTe and Its Application to Radiation Detectors : B-5: SENSING DEVICES
- High-Purity CdTe Single Crystals Grown from Solutions
- Annealing Behavior of Defects in Electron-Irradiated p-Type CdTe
- Edge and Donor-Acceptor Pair Emissions in Cadmium Telluride
- Effect of Electron Irradiation on Edge Emission Spectra in CdTe
- CdTe(Cl) Radiation Detector Operating at Room Temperature(Abstracts of Doctral Dissertations)
- Strain Effects on Exciton Transition in CdTe Films on GaAs(100) Substrates
- Exciton Binding Energy under Electric Field in ZnTe1-xSx/ZnS Strained-Layer Superlattices
- Valence Band Structure and Optical Gain in Cd_xZn_/ZnS Quantum Wells : Short Note
- Photoluminescence Analysis of Deep Acceptor in CdTe Films on GaAs(100) Substrates
- Effect of Heat Treatment on 1.47 eV Band in CdTe Films on GaAs(100) Substrates
- Production of the ^3He^-Ion by an R.F. Ion Source
- Dependence of Excitonic Emission Lines and the 1.47 eV Band on Growth Temperature and Substrate Misorientation in MOCVD-Grown CdTe Films on (100) GaAs
- Properties of the Excitonic Emission at Room Temperature in Cd_Zn_S/ZnS Strained-Layer Superlattices
- Effects of Dielectric Confinement on Exciton Binding Energies in ZnSe/MgxBeyZn1-x-ySe Quantum Wells
- Present Status of White LED Lighting Technologies in Japan(LED Lighting Technologies)
- Some Studies of the ^23+p Reaction at E_p=2.2-4.5MeV
- Effect of Carrier Localization on Optical Gain Formation in Cd_xZn_1-xS/ZnS Quantum Wells
- Photocurrent Spectroscopy of Excitonic Transitions in CdZnS/ZnS Strained-Layer Superlattices
- Growth and Optical Properties of CdS:(Cd, Zn)S Strained Layer Superlattices
- Proton Recoil Neutron Spectrometer using a Liquid Hydrogen Radiator and a CsI(Tl)
- Strain-Induced Energy Shift of Photoluminescence Spectra in MOCVD-Grown ZnTe Films on (100) GaAs Substrates
- Excitonic Emission in GaN Films on AlN Substrates Using Microwave-Excited N Plasma Method
- Estimation of Effective Band Gap Energy of CdxZn1-xS/ZnS Multiple Quantum Wells Lattice-Matched to GaP Substrates
- Band Offset Dependence of Exciton Binding Energy in CdxZn1-xS/ZnS Quantum Wells
- Proposal for ZnS/Mg xBeyZn1-x-yS Quantum Wells
- Estimation of Band Lineups and Optical Gains in CdxZn1-xS/MgyZn1-yS Quantum Wells
- Effect in Changes of Conduction and Valence Band Offsets on Exciton Binding Energy in CdxZn1-xSe/ZnSySe1-y Single Quantum Wells
- Reduction in Induced Strain in CdxZn1-xS Well Layers Using ZnS1-ySey Barrier Layers and Inhibition of Induced Strain due to Lattice Mismatch between MgzZn1-zS Cladding Layers and CdxZn1-xS/ZnS1-ySey Multiple Quantum Wells by Adjusting Mg Content
- Effect of Induced Strain on Band Lineups in CdxZn1-xS/ZnS/BeyZn1-yS Separate-Confinement Heterostructures
- Effect of Induced Strain Due to Lattice Mismatch between MgyZn1-yS Cladding Layers and CdxZn1-xS/ZnS Quantum Wells on Effective Band Gap Energy in CdxZn1-xS/ZnS/MgyZn1-yS Separate-Confinement Heterostructures
- Excitonic Properties in CdxZn1-xS/ZnS Quantum Wells
- Effect of Image Charge on Exciton Binding Energy in ZnS/BexZn1-xS Quantum Wells
- Design of Band Lineups and Optical Gains in CdxZn1-xS/CdyZn1-yS Multiple Quantum Wells Lattice-Matched to GaAs Substrates
- Photoluminescence and Reflectance Spectra of CdTe films on GaAs(100) Substrates
- Effect of Induced Strain on Valence Band in CdxZn1-xS Wells of CdxZn1-xS/ZnS/BeyZn1-yS Separate-Confinement Heterostructures
- Exciton Binding Energies in Cd0.11Zn0.89S/Mg0.22Zn0.78S Quantum Wells Lattice-Matched to GaP Substrates
- Reduction of Inhomogeneous Broadening of Exciton Luminescence in CdxZn1-xSe Ternary Alloys and CdxZn1-xSe–ZnSe Multiple Quantum Wells Grown by Molecular-Beam Epitaxy under Se-Excess Supply
- Proposal for BexZn1-xS Barrier Layers Combined with ZnS Wells