Proposal for ZnS/Mg xBeyZn1-x-yS Quantum Wells
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概要
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We propose the use of MgxBeyZn1-x-yS barriers combined with ZnS wells because MgxBeyZn1-x-yS barriers can be lattice-matched to ZnS wells by adjusting magnesium (Mg) ($x$) and beryllium (Be) ($ y$) contents. With increasing $x$ and $y$, conduction and valence band offsets in ZnS/MgxBeyZn1-x-yS single quantum wells (SQWs) increase and thus the effective band gap energy can be controlled by adjusting $x$ and $y$. In addition, the exciton binding energy increases. We indicate that the use of MgxBeyZn1-x-yS barriers can reduce the induced strain in the ZnS wells and is useful for designing ultraviolet applications using ZnS wells.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2008-06-25
著者
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ONODERA Chikara
Electronic Engineering Course, Aomori Prefectural Towada Technical Senior High School
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Shoji Tadayoshi
Department Of Electronics Tohoku Institute Of Technology
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Taguchi Tsunemasa
Department Of Electrical And Electronic Engineering Faculty Of Engineering Yamaguchi University
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Hiratate Yukio
Department Of Electronics Tohoku Institute Of Technology
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Shoji Tadayoshi
Department of Electronics, Tohoku Institute of Technology, 35-1 Yagiyama Kasumi-cho, Taihaku-ku, Sendai 982-8577, Japan
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Hiratate Yukio
Department of Electronics, Tohoku Institute of Technology, 35-1 Yagiyama Kasumi-cho, Taihaku-ku, Sendai 982-8577, Japan
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Onodera Chikara
Electronic Engineering Course, Aomori Prefectural Hachinohe Technical Senior High School, 1-2-27 Koyo, Hachinohe, Aomori 031-0801, Japan
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Onodera Chikara
Electronic Engineering Course, Aomori Prefectural Towada Technical Senior High School, 215-1 Shimotai Sanbongi, Towada, Aomori 034-0001, Japan
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