Effect of Image Charge on Exciton Binding Energy in ZnS/BexZn1-xS Quantum Wells
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概要
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We calculate the binding energies of heavy- and light-hole excitons in ZnS/BexZn1-xS single quantum wells (SQWs) as functions of well width using a variational method by considering the effect of the mismatch between the dielectric constants of the well and barriers (effect of image charge). The increases in the heavy- and light-hole exciton binding energies in ZnS/BexZn1-xS SQWs at a Be content ($x$) equal to 0.76 are estimated to be 29.9 and 28.2 meV, respectively. For narrow wells, the heavy- and light-hole exciton binding energies calculated by considering the effect of image charge exceed the longitudinal optical phonon energy of ZnS for $x\geq 0.2$.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2009-12-25
著者
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ONODERA Chikara
Electronic Engineering Course, Aomori Prefectural Towada Technical Senior High School
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Shoji Tadayoshi
Department Of Electronics Tohoku Institute Of Technology
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Taguchi Tsunemasa
Department Of Electrical And Electronic Engineering Faculty Of Engineering Yamaguchi University
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Yoshida Masaaki
Electronic Devices Company Ricoh Co. Ltd.
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Yoshida Masaaki
Electronic Engineering Course, Aomori Prefectural Towada Technical Senior High School, 215-1 Shimotai Sanbongi, Towada, Aomori 034-0001, Japan
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Onodera Chikara
Electronic Engineering Course, Aomori Prefectural Hachinohe Technical Senior High School, 1-2-27 Koyo, Hachinohe, Aomori 031-0801, Japan
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Onodera Chikara
Electronic Engineering Course, Aomori Prefectural Towada Technical Senior High School, 215-1 Shimotai Sanbongi, Towada, Aomori 034-0001, Japan
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