Band Offset Dependence of Exciton Binding Energy in CdxZn1-xS/ZnS Quantum Wells
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概要
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The enhancement of exciton binding energy was clearly observed with increasing cadmium (Cd) alloy content in CdxZn1-xS/ZnS quantum wells (QWs). However, the maximum exciton binding energy saturated at high Cd alloy content. The amount of decrease in exciton binding energy decreased with increasing Cd alloy content under an electric field.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 2003-12-15
著者
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ONODERA Chikara
Electronic Engineering Course, Aomori Prefectural Towada Technical Senior High School
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Shoji Tadayoshi
Department Of Electronics Tohoku Institute Of Technology
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Taguchi Tsunemasa
Department Of Electrical And Electronic Engineering Faculty Of Engineering Yamaguchi University
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Hiratate Yukio
Department Of Electronics Tohoku Institute Of Technology
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Shoji Tadayoshi
Department of Electronics, Tohoku Institute of Technology, 35-1 Yagiyama Kasumi-cho Taihaku-ku, Sendai 982-8577, Japan
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Hiratate Yukio
Department of Electronics, Tohoku Institute of Technology, 35-1 Yagiyama Kasumi-cho Taihaku-ku, Sendai 982-8577, Japan
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Onodera Chikara
Electronic Engineering Course, Aomori Prefectural Hachinohe Technical Senior High School, 1-2-27 Koyo, Hachinohe, Aomori 031-0801, Japan
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