Reduction of Inhomogeneous Broadening of Exciton Luminescence in CdxZn1-xSe Ternary Alloys and CdxZn1-xSe–ZnSe Multiple Quantum Wells Grown by Molecular-Beam Epitaxy under Se-Excess Supply
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概要
- 論文の詳細を見る
Optical and structural properties of CdxZn1-xSe ternary alloy layers grown by molecular-beam epitaxy (MBE) have been studied as a function of the Se/(Cd, Zn) beam pressure ratio (BPR). With increasing Se/(Cd, Zn) BPR, the inhomogeneous broadening of exciton luminescence and the rms roughness of surfaces decreased drastically. This indicates that Se-excess supply during MBE growth suppresses alloy composition fluctuation and also enhances two-dimensional growth nucleation. Furthermore, CdxZn1-xSe–ZnSe multiple quantum well (MQW) structures have been fabricated under Se-excess supply. Biexciton luminescence from MQW structures was observed, even under a cw weak excitation condition (less than 100 mW/cm2). This observation reflects the finding that exciton lifetime increase as a result of the improvement of crystalline quality, which results in the enhancement of carrier accumulation.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 1999-06-15
著者
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FUJIMOTO Masakatsu
On leave from Industrial Technology Institute, Yamaguchi Prefectural Government
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Taguchi Tsunemasa
Department Of Electrical And Electronic Engineering Faculty Of Engineering Yamaguchi University
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Yoshikawa Mitsutoshi
Choshu Industry Co. Ltd.
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Kubo Hachiya
Yamaguchi Nf Electronics Co. Lid.
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Yamada Yoichi
Department Of Cellular Physiology And Signal Transduction Sapporo Medical University School Of Medic
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Senda Kazuhiko
Department Of Electrical And Electronic Engineering Yamaguchi University
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Shigematsu Hiroshi
Department of Electrical and Electronic Engineering, Yamaguchi University,
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Kubo Hachiya
Yamaguchi NF Electronics Co., Ltd., 1568-3 Miyanokami-horiyama, Yamaguchi, Yamaguchi 753-0001, Japan
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Fujimoto Masakatsu
On leave from Industrial Technology Institute, Yamaguchi Prefectural Government, 4-1-1 Asutopia, Ube, Yamaguchi 755-0151, Japan
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