Spatial Inhomogeneity of Aluminum Content in Air-Bridged Lateral Epitaxially Grown AlGaN Ternary Alloy Films Probed by Cross-Sectional Scanning Near-Field Optical Microscopy
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概要
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We systematically studied spatial inhomogeneity of aluminum content in air-bridged lateral epitaxially grown (ABLEG) AlGaN ternary alloy films by high-resolution photoluminescence mapping probed with cross-sectional scanning near-field optical microscopy (SNOM). We observed the content changes along the vertical \langle 0001\rangle and the horizontal \langle 11\bar{2}0\rangle growth directions in AlGaN films with four different mask widths. The spatial inhomogeneity was determined by considering the following factors: the different growth rates of the lateral and vertical directions, the aluminum and gallium adatom supplies from a gas that depend on mask width, and the aluminum and gallium adatom diffusions on the (0001) and (11\bar{2}0) facets.
- 2012-03-25
著者
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Ishibashi Akihiko
Department Of Physics Faculty Of Science Kyoto University
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Yamada Yoichi
Department Of Cellular Physiology And Signal Transduction Sapporo Medical University School Of Medic
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Murotani Hideaki
Department of Materials Science and Engineering, Yamaguchi University, Ube, Yamaguchi 755-8611, Japan
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Yokogawa Toshiya
Advanced Devices Development Center, Panasonic Corporation, Moriguchi, Osaka 570-8501, Japan
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Ishibashi Akihiko
Department of Materials Science and Engineering, Yamaguchi University, Ube, Yamaguchi 755-8611, Japan
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