Excitonic Emission in GaN Films on AlN Substrates Using Microwave-Excited N Plasma Method
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概要
- 論文の詳細を見る
Hexagonal gallium nitride (GaN) films are grown on aluminum nitride ceramic substrates in gallium and nitrogen plasmas excited by microwaves. The band-edge photoluminescence properties of the GaN films are investigated at 77 K and at room temperature. A strong ultraviolet (UV) emission, consisting of two components with different decay characteristics, is observed. The fast decay component is due to free exciton recombination and the slow one is ascribed to recombination of localized excitons.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 1996-02-28
著者
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Sasaki Fumio
Electrotechnical Laboratory
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Kobayashi Shunsuke
Electrotechnical Laboratory
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Tani Toshiro
Electrochnical Laboratory
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Okada Kiyohiko
Department Of Electrical And Electronic Engineering Yamaguchi University
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Kai Ayako
Department Of Electrical And Electronic Engineering Yamaguchi University
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Taguchi Tsunemasa
Department Of Electrical And Electronic Engineering Faculty Of Engineering Yamaguchi University
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Taniguchi Hitofumi
Fujisawa Lab. Tokuyama Corp.
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Yamada Yoichi
Department Of Cellular Physiology And Signal Transduction Sapporo Medical University School Of Medic
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Okada Kiyohiko
Department of Electrical and Electronic Engineering, Yamaguchi University,
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Taguchi Tsunemasa
Department of Electrical and Electronic Engineering, Yamaguchi University,
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Yamada Yoichi
Department of Electrical and Electronic Engineering, Yamaguchi University,
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Kobayashi Shunsuke
Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba, Ibaraki 305, Japan
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