Effect of Induced Strain on Valence Band in CdxZn1-xS Wells of CdxZn1-xS/ZnS/BeyZn1-yS Separate-Confinement Heterostructures
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概要
- 論文の詳細を見る
We have performed a theoretical study of valence band dispersion in CdxZn1-xS wells of CdxZn1-xS/ZnS/BeyZn1-yS separate-confinement heterostructures (SCHs). With increasing beryllium (Be) content ($y$), the induced compressive strain increases, and the energy difference between each subband increases. With increasing $y$, the nonparabolicities of energy dispersion curves in the valence band are reduced.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2006-07-15
著者
-
Shoji Tadayoshi
Department Of Electronics Tohoku Institute Of Technology
-
Taguchi Tsunemasa
Department Of Electrical And Electronic Engineering Faculty Of Engineering Yamaguchi University
-
Hiratate Yukio
Department Of Electronics Tohoku Institute Of Technology
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Onodera Chikara
Electronic Engineering Course, Aomori Prefectural Hachinohe Technical Senior High School, 1-2-27 Koyo, Hachinohe, Aomori 031-0801, Japan
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