Proposal for BexZn1-xS Barrier Layers Combined with ZnS Wells
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概要
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We have performed a theoretical study of exciton binding energy and effective band gap energy in ZnS/BexZn1-xS single quantum wells (SQWs). With increasing beryllium (Be) content ($x$), conduction and valence band offsets increase in ZnS/BexZn1-xS SQWs and thus exciton binding energy increases. We conclude that the BexZn1-xS barrier layer is useful for designing ZnS-based quantum wells (QWs).
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2006-07-15
著者
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Shoji Tadayoshi
Department Of Electronics Tohoku Institute Of Technology
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Taguchi Tsunemasa
Department Of Electrical And Electronic Engineering Faculty Of Engineering Yamaguchi University
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Hiratate Yukio
Department Of Electronics Tohoku Institute Of Technology
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Onodera Chikara
Electronic Engineering Course, Aomori Prefectural Hachinohe Technical Senior High School, 1-2-27 Koyo, Hachinohe, Aomori 031-0801, Japan
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