Photoluminescence and Reflectance Spectra of CdTe films on GaAs(100) Substrates
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概要
- 論文の詳細を見る
Photoluminescence (PL) and reflectance spectra were measured on CdTe films grown on GaAs(100) substrates by metal organic chemical vapor deposition (MOCVD). By comparing the PL spectra with the reflectance spectra in a certain exciton energy range, we identified heavy- and light-hole exciton transitions in the CdTe films on the GaAs(100) substrates. The energy separation between the heavy- and light-hole exciton transitions was estimated to be 3.1 meV. This energy separation was caused by a compressive strain due to a difference in thermal expansion coefficient between the grown CdTe films and GaAs substrates. Bound exciton emissions and the 1.42 eV band in the PL spectra were also studied on the basis of their temperature dependence.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2009-11-25
著者
-
Taguchi Tsunemasa
Department Of Electrical And Electronic Engineering Faculty Of Engineering Yamaguchi University
-
Yoshida Masaaki
Department Of Applied Chemistry Faculty Of Engineering Utsunomiya University
-
Onodera Chikara
Electronic Engineering Course, Aomori Prefectural Hachinohe Technical Senior High School, 1-2-27 Koyo, Hachinohe, Aomori 031-0801, Japan
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