Effects of Dielectric Confinement on Exciton Binding Energies in ZnSe/MgxBeyZn1-x-ySe Quantum Wells
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概要
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We study the effects of dielectric confinement on exciton binding energies in ZnSe/MgxBeyZn1-x-ySe single quantum wells. Heavy- and light-hole exciton binding energies are found to increase owing to dielectric confinement when the well width is less than 10 nm.
- 2009-09-25
著者
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Shoji Tadayoshi
Department Of Electronics Tohoku Institute Of Technology
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Taguchi Tsunemasa
Department Of Electrical And Electronic Engineering Faculty Of Engineering Yamaguchi University
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Yoshida Masaaki
Electronic Devices Company Ricoh Co. Ltd.
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Onodera Chikara
Electronic Engineering Course, Aomori Prefectural Hachinohe Technical Senior High School, 1-2-27 Koyo, Hachinohe, Aomori 031-0801, Japan
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