Effect of Carrier Localization on Optical Gain Formation in Cd_xZn_1-xS/ZnS Quantum Wells
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概要
- 論文の詳細を見る
We present a theoretical study on optical gain formation due to the localized state in Cd_xZn_1-xS/ZnS strained-layer quantum wells.We have calculated the optical gain coefficient, which is produced when carriers are localized in a quantum disk due to potential fluctuation of the alloy in a Cd_xZn_1-xS well .It is assumed in our model that the density of the localized state in this quantum disk can be followed by Gaussian distribution function.It has been revealed that the formation of optical gain due to the localization of carriers takes place at a carrier concentration of about 1×10^18cm^-3, which is one order of magnitude lower than that of band-to-band transition.
- 社団法人応用物理学会の論文
- 2000-04-15
著者
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小野寺 力
Electronic Engineering Course Aomori Prefectural Towada Technical Senior High School
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Taguchi Tsunemasa
Department Of Electrical And Electronic Engineering Yamaguchi University
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Taguchi Tsunemasa
Department Of Electrical And Electronic Engineering Faculty Of Engineering Yamaguchi University
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ONODERA Chikara
Hachinohe Technical High School
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