Exciton Binding Energy under Electric Field in ZnTe1-xSx/ZnS Strained-Layer Superlattices
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概要
- 論文の詳細を見る
Conduction and valence band offsets in ZnTe1-xSx/ZnS strained-layer superlattices (SLSs) are calculated as a function of sulfur (S) concentration ($x$). The valence band offsets markedly decreases with increasing $x$ because the energy difference between the band gaps ZnS and ZnTe1-xSx decreases with increasing $x$. Exciton binding energy in the ZnTe1-xSx/ZnS SLSs decreases with increasing ZnTe1-xSx and ZnS layer thickness. This system has two exciton systems under an applied electric field. The energy splitting of the exciton systems increases with increasing electric field strength.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2006-07-15
著者
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ONODERA Chikara
Electronic Engineering Course, Aomori Prefectural Towada Technical Senior High School
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SHOJI Tadayoshi
Department of Electronics, Tohoku Institute of Technology
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TAGUCHI Tsunemasa
Department of Electrical and Electronic Engineering, Yamaguchi University
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TAGUCHI Takao
SORTEC Corporation
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Shoji Tadayoshi
Department Of Electronics Tohoku Institute Of Technology
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Taguchi T
Research Laboratories Nippondenso Co. Ltd.
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Shoji T
Department Of Electronics Tohoku Institute Of Technology
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小野寺 力
Electronic Engineering Course Aomori Prefectural Towada Technical Senior High School
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TAGUCHI Takao
ASET Super-fine SR Lithography Laboratory
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Taguchi T
Department Of Electrical And Electronic Engineering Yamaguchi University
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Taguchi Tsunemasa
Department Of Electrical And Electronic Engineering Faculty Of Engineering Yamaguchi University
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HIRATATE Yukio
Department of Electronics, Tohoku Institute of Technology
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Hiratate Yukio
Department Of Electronics Tohoku Institute Of Technology
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Hiratate Y
Department Of Electronics Tohoku Institute Of Technology
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Onodera Chikara
Electronic Engineering Course, Aomori Prefectural Hachinohe Technical Senior High School, 1-2-27 Koyo, Hachinohe, Aomori 031-0801, Japan
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