Critical Layer Thickness of n-In_<0.52>Al_<0.48>AS/In_<0.8>Ga_<0.2>As/In_<0.52>Al_<0.48>AS Pseudomorphic Heterostructures Studied by Photoluminescence
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1994-02-01
著者
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TAGUCHI Takao
SORTEC Corporation
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Hattori Tadashi
Research Laboratories, Nippondenso Co., Ltd.
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Taguchi T
Research Laboratories Nippondenso Co. Ltd.
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Hattori Tetsuya
Depaetment Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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SUGIYAMA Yoshinobu
Electrotechnical Laboratory
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TAGUCHI Takao
ASET Super-fine SR Lithography Laboratory
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Tacano Munecazu
Electrotechnical Laboratory
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Tacano Munecazu
Electrotechnical Laboratory:(presernt Address) Kyocera Corp.
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UENO Yoshiki
Advanced Mobile Telecommunication Technology Inc.
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Hattori Takashi
Central Research Laboratory Hitachi Ltd.
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Hattori Tadashi
Research Laboratories Denso Corporation
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Ueno Yoshiki
Research Laboratories Nippondenso Co. Ltd.
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Taguchi T
Department Of Electrical And Electronic Engineering Yamaguchi University
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Ueno Y
Advanced Mobile Telecommunication Technology Inc.
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TAGUCHI Takashi
Research Laboratories, Nippondenso Co., Ltd.
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MATSUGATANI Kazuoki
Research Laboratories Nippondenso Co., Ltd.
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TAKEUCHI Yukihiro
Research Laboratories Nippondenso Co., Ltd.
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Takeuchi Yukihiro
Research Laboratories Denso Corporation
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Takeuchi Yukihiro
Research Laboratories Nippondenso Co. Ltd.
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Hattori Takeo
Faculty Of Engineering Musashi Institute Of Technology
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Matsugatani Kazuoki
Research Laboratories Nippondenso Co. Ltd.
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Matsugatani Kazuoki
Research Laboratories Denso Corporation
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HATTORI TADASHI
Research Center for Advanced Waste and Emission Management, Nagoya University
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