Development of Light Sources by Large-Scale Integrated Light-Emitting Diodes

スポンサーリンク

概要

• 論文の詳細を見る

• We have demonstrated large-scale integrated light-emitting diodes (LSILEDs) by using direct flip-chip bonding (DFCB) technique on a size of 30×40 mm^2 ceramic package. Radiant flux measured at DC current of 9.1 A and forward voltage of 4.0 V was 3.3 W. Luminous flux, luminous efficacy and color-rendering index of white LED fabricated with the LSILED as the excitation source measured at DC current of 9.1 A and forward voltage of 4.0 V was 766 lm, 21.0 lm/W, and 82, respectively. The LSILED is very promising as a compact, high dense and high luminous flux white light source.

• 社団法人照明学会の論文

著者

• FUKUI Takeshi

  Graduate School of Science and Engineering, Yamaguchi University

• SAKUTA Hiroaki

  Graduate School of Science and Engineering, Yamaguchi University

• MIYACHI Tsutomu

  Graduate School of Science and Engineering, Yamaguchi University

• KAMON Kunihito

  Faculty of Engineering, Yamaguchi University

• HAYASHI Hideki

  Faculty of Engineering, Yamaguchi University

• NAKAMURA Nobutaka

  Choshu Industry CO., LTD

• UCHIDA Yuji

  Faculty of Engineering, Yamaguchi University

• KURAI Satoshi

  Graduate School of Science and Engineering, Yamaguchi University

• TAGUCHI Tsunemasa

  Graduate School of Science and Engineering, Yamaguchi University

• Fukui Takeshi

  Graduate School Of Science And Engineering Yamaguchi University

• Miyachi Tsutomu

  Graduate School Of Science And Engineering Yamaguchi University

• TAGUCHI Takao

  SORTEC Corporation

• Uchida Yuji

  Faculty Of Engineering Yamaguchi University

• Kurai Satoshi

  Science And Engineering Yamaguchi University

• Kurai Satoshi

  Graduate School Of Science And Engineering Yamaguchi University

• Sakuta Hiroaki

  Graduate School Of Science And Engineering Yamaguchi University

• Kamon Kunihito

  Graduate School Of Science And Engineering Yamaguchi University

• Taguchi T

  Department Of Materials Science And Engineering Yamaguchi University

• Kurai Satoshi

  Department Of Electrical And Electronic Engineering Faculty Of Engineering Yamaguchi University

• Kurai Satoshi

  Department Of Electrical And Electronic Engineering Tokushima University

• Taguchi Tsunemasa

  Graduate School Of Science And Engineering Yamaguchi University

• Taguchi Tsunemasa

  Faculty Of Engineering Yamaguchi University

• Nakamura Nobutaka

  Choshu Industry Co. Ltd

• Hayashi Hideki

  Graduate School Of Science And Engineering Yamaguchi University

• Taguchi T

  Department Of Electrical And Electronic Engineering Yamaguchi University

• Taguchi Tsunemasa

  Department Of Materials Science And Engineering Yamaguchi University

関連論文

• Threshold Current Density in ZnS/MgBeZnS Quantum Well Ultraviolet Lasers
• Development of White Light Emitting Diodes by Multi-layered Red, Green, and Bule Phosphors Excited by Near-ultraviolet Light Emitting Diodes
• Near-ultraviolet LED of the External Quantum Efficiency Over 45% and its Application to High-color Rendering Phosphor Conversion White LEDs
• Proton Transfer to Melamine Crosslinkers in X-Ray Chemically Amplified Negative Resists Studied by Time-Resolved and Steady-State Optical Absorption Measurement
• A Novel White LED Lighting System for Appreciation of Japanese Antique Ink Painting
• Direct Evidence that Dislocations are Non-Radiative Recombination Centers in GaN
• Surface Pretreatment of Bulk GaN for Homoepitaxial Growth by Metalorganic Chemical Vapor Deposition
• High-Density Recording Characteristics of a 90 mm Phase-Change Optical Disk
• Transient Species Induced in X-ray Chemically Amplified Positive Resists:Post-Exposure Delay Effect
• Fabrication of 0.1μm Line-and-Space Patterns using Soft X-Ray Reduction Lithography
• Sub-0.1 μm Resist Patterning in Soft X-Ray (13 nm) Projection Lithography
• Alternative Interpretation of Impulse Response of Phonon-Polaritons
• Excitation of Phonon-Polaritons with Asymmetric Transient Grating
• Dependence of Light Extraction From Near-Ultraviolet Light-Emitting Diodes on Refraction Index, Transmittance and Shape
• Biexciton Luminescence from GaN Epitaxial Layers
• Time-Resolved Observation of Laser-Induced Surface Reaction for Si/Cl_2 System Using Second-Harmonic Generation
• Excitonic Emission in GaN Films on AlN Substrates Using Microwave-Excited N Plasma Method
• Observation of Etching Reaction for Si/XeF_2 System Using Second-Harmonic Generatiorn
• Sub-100-nm Device Fabrication using Proximity X-Ray Lithography at Five Levels
• Study on the Luminous and Thermal Characteristics of High-Power Near-Ultraviolet LED Packages with Various Chip Arrangements
• Development of Light Sources by Large-Scale Integrated Light-Emitting Diodes
• Analysis of Chip/Bump/Ceramic Interface of Flip-Chip Bonded LED Directly on Ceramic Packages
• Optical Properties of Bound Excitons and Biexcitons in GaN(Special Issue on Blue Laser Diodes and Related Devices/Technologies)
• Excitonic Emissions under High Excitation of Hexagonal GaN Single Crystal Grown by Sublimation Method
• Growth of Bulk Gan Single Crystals by the Pressure-Controlled Solution Growth Method
• Developments of GaN Bulk Substrates for GaN Based LEDs and LDs(Special Issue on Blue Laser Diodes and Related Devices/Technologies)
• Growth of Bulk GaN Single Crystals by the Pressure-Controlled Solution Growth Method
• Structural Characterization of High-Quality ZnS Epitaxial Layers Grown on GaAs Substrates by Low-Pressure Metalorganic Chemical Vapor Deposition : Surfaces, Interfaces, and Films
• Internal Quantum Efficiency of Nitride-based Light-Emitting Diodes
• Optical Properties of ZnCdS:I Orange and ZnSTe:I White Thin Film Phosphor for High Ra White LED
• Temperature Dependence of Free-Exciton Ltuninescence from High-Quality ZnS Epitaxial Layers
• Optical characterization of high-quality ZnS epitaxial films grown by low-pressure metalorganic chemical vapor deposition
• Intense Ultraviolet Electroluminescence Properties of the High-Power InGaN-Based Light-Emitting Diodes Fabricated on Patterned Sapphire Substrates
• Intense Ultraviolet Electroluminescence Properties of the High-Power InGaN-Based LEDs Fabricated on Patterned Sapphire Substrates
• Recombination Dynamics of Self-Trapped Excitons in the High-Efficient Blue LEDs under Reverse Bias Condition
• Dependence of Exciton-Longitudinal-Optical-Phonon Interaction Energy on Well Width in Cd_Zn_Se/ZnSe Multiple-Quantum Wells
• Reduction of Inhomogeneous Broadening of Exciton Luminescence in Cd_xZn_Se Ternary Alloys and Cd_xZn_Se-ZnSe Multiple Quantum Wells Grown by Molecular-Beam Epitaxy under Se-Excess Supply
• Effect of High Current Injection on the Blue Radiative Recombination in InGaN Single Quantum Well Light Emitting Diodes
• Radiative Recombination of Hot Electrons in InGaN Single Quantum Well Blue LEDs
• High-Performance X-Ray Mask Fabrication Using TaGeN Absorber and Dummy Pattern Method for Sub-100nm Proximity X-Ray Lithography : Instrumentation, Measurement, and Fabrication Technology
• Evaluation of Overlay Accuracy for 100-nm Ground Rule in Proximity X-Ray Lithography
• Performance of X-Ray Stepper for Next-Generation Lithography
• Pattern Etching of Ta X-ray Mask Absorber on SiC Membrane by Inductively Coupled Plasma
• Precise Stress Control of Ta Absorber using Low Stress Alumima Etching Mask for X-Ray Mask Fabrication
• Homoepitaxial Growth of GaN Layers by Reactive Molecular-Beam Epitaxy on Bulk GaN Single Crystals Prepared by Pressure-Controlled Solution Growth
• Effect of Cooling Process after GaN Epitaxial Growth by Radio-Frequency Molecular Beam Epitaxy : Semiconductors
• Effects of Hg Annealing on Photoluminescence Spectra of CdTe Crystals and MOCVD-Grown CdTe/GaAs Films
• Developing White LED Lighting Systems and Its Technological Roadmap in Japan
• Performance of a 600 Mbyte 90 mm Phase-Change Optical Disk against Disk Tilt
• Nucleation Control in the Growth of Bulk GaN by Sublimation Method
• Transmission Electron Microscopy of Sublimation-Grown GaN Single Crystal and GaN Homoepitaxial Film
• Growth and Characterization of Thick GaN by Sublimation Method and Homoepitaxial Growth by Metalorganic Chemical Vapor Deposition
• Photopumped Stimulated Emission from Homoepitaxial GaN Grown on Bulk GaN Prepared by Sublimation Method
• 60GHz mixer MMIC for millimeter wave radar
• Critical Layer Thickness of n-In_Al_AS/In_Ga_As/In_Al_AS Pseudomorphic Heterostructures Studied by Photoluminescence
• High Output Power Near-Ultraviolet and Violet Light-Emitting Diodes Fabricated on Patterned Sapphire Substrates Using Metalorganic Vapor Phase Epitaxy(LED Lighting Technologies)
• Fabrication and Illuminance Properties of Phosphor-conversion Green Light-emitting Diode with a Luminous Efficacy over 100 lm/W
• Exciton Binding Energy under Electric Field in ZnTe1-xSx/ZnS Strained-Layer Superlattices
• Valence Band Structure and Optical Gain in Cd_xZn_/ZnS Quantum Wells : Short Note
• Present Status of White LED Lighting Technologies in Japan(LED Lighting Technologies)
• Enhancement of Defocus Characteristics with Intermediate Phase Interference in Phase Shift Method (Special Issue on Quarter Micron Si Device and Process Technologies)
• Phase Defect Repair Method for Alternating Phase Shift Masks Conjugate Twin-Shifter Method
• Superior Illuminant Characteristics of Color Rendering and Luminous Efficacy in Multilayered Phosphor Conversion White Light Sources Excited by Near-Ultraviolet Light-Emitting Diodes
• The Concept of Fashion Design on the Basis of Color Coordination Using White LED Lighting
• Present Status of Energy Saving Technologies and Future Prospect in White LED Lighting
• Cathodoluminescence Study of Optical Inhomogeneity in Si-Doped AlGaN Epitaxial Layers Grown by Low-Pressure Metalorganic Vapor-Phase Epitaxy

もっと見る 閉じる

スポンサーリンク