A 25-nm-pitch GaInAs/InP Buried Structure Using Calixarene Resist
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1998-07-01
著者
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Hongo Hiroo
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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Hattori Tetsuya
Depaetment Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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MIYAMOTO Yasuyuki
Department of Physical Electronics, Tokyo Institute of Technology
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FURUYA Kazuhito
Department of Physical Electronics, Tokyo Institute of Technology
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SUHARA Michihiko
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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HATTORI Takeo
New Industry Creation Hatchery Center, Tohoku University
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Hattori Takashi
Central Research Laboratory Hitachi Ltd.
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Hattori T
New Industry Creation Hatchery Center Tohoku University
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Suhara M
Tokyo Metropolitan Univ. Tokyo Jpn
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Miyamoto Y
Department Of Physical Electronics Tokyo Institute Of Technology
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KOKUBO Atsushi
Depaetment of Electrical and Electronic Engineering, Tokyo Institute of Technology
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HONGO Hiroo
Depaetment of Electrical and Electronic Engineering, Tokyo Institute of Technology
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MIYAMOTO Yasuyuki
Depaetment of Electrical and Electronic Engineering, Tokyo Institute of Technology
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FURUYA Kazuhito
Depaetment of Electrical and Electronic Engineering, Tokyo Institute of Technology
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Hongo H
Nec Corp. Ibaraki Jpn
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Kokubo Atsushi
Depaetment Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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Furuya K
Department Of Physical Electronics Tokyo Institute Of Technology
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Hattori Takeo
Faculty Of Engineering Musashi Institute Of Technology
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