MIYAMOTO Yasuyuki | Department of Physical Electronics, Tokyo Institute of Technology
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概要
関連著者
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MIYAMOTO Yasuyuki
Department of Physical Electronics, Tokyo Institute of Technology
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FURUYA Kazuhito
Department of Physical Electronics, Tokyo Institute of Technology
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Miyamoto Yasuyuki
Department Of Electrical And Electronic Engineering
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Miyamoto Yasuyuki
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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Furuya Kazuhito
Department Of Electrical And Electronic Engineering
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Miyamoto Y
Department Of Physical Electronics Tokyo Institute Of Technology
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Furuya K
Department Of Physical Electronics Tokyo Institute Of Technology
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Suhara M
Tokyo Metropolitan Univ. Tokyo Jpn
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SUHARA Michihiko
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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Hongo Hiroo
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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Hongo H
Nec Corp. Ibaraki Jpn
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Furuya Kazuhito
Tokyo Institute Of Technology
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TAKEMURA Riichiro
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
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Takemura Riichiro
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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SUZUKI Jun
Department of Health Care Chemistry, College of Environmental Health, Azabu University
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Suzuki Jun
Department Of Cardiovascular Medicine Tohoku University Graduate School Of Medicine
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Suzuki J
Tokyo Inst. Technol. Tokyo Jpn
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SUEMATSU Yasuharu
Department of Physical Electronics, Tokyo Institute of Technology
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Suematsu Yasuharu
Department Of Electronic Engineering Kohgakuin University
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Suzuki J
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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OOBO Takashi
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
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Arai T
Department Of Physical Electronics Tokyo Institute Of Technology
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Saito Hisahi
Department Of Physical Electronics Tokyo Institute Of Technology
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Suzuki Jun
Department Of Cardiology Saiseikai Saijo Hospital
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SUZUKI Hiroyuki
Department of Oral and Maxillofacial Surgery, Hamamatsu University School of Medicine
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KOBAYASHI Takashi
Department of Information Engineering, Graduate School of Information Science, Nagoya University
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Kobayashi Takashi
Department Of Cardiology Kobe City Medical Center General Hospital
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Kobayashi T
Ntt Corp. Kanagawa Jpn
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Hattori Tetsuya
Depaetment Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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HATTORI Takeo
New Industry Creation Hatchery Center, Tohoku University
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Hattori Takashi
Central Research Laboratory Hitachi Ltd.
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Hattori T
New Industry Creation Hatchery Center Tohoku University
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Oobo Takashi
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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Suzuki Hiroyuki
Department Of Physical Electronics Tokyo Institute Of Technology
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Suzuki Hiroyuki
Department Of Applied Physics School Of Science And Engineering Waseda University:(present Address)h
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ARAI Toshiki
Department of Physical Electronics, Tokyo Institute of Technology
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Kobayashi Takashi
Department Of Physical Electronics Tokyo Institute Of Technology
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YAMAGAMI Shigeharu
Silicon Systems Research Labs.
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Talahashi Shinnosuke
Department of Physical Electronics, Tokyo Institute of Technology
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Hattori Takeo
Faculty Of Engineering Musashi Institute Of Technology
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Talahashi Shinnosuke
Department Of Physical Electronics Tokyo Institute Of Technology
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古屋 一仁
東京工業大学院理工学研究科
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SATO Ken
Department of Dermatology, Iwate Medical University School of Medicine
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齋藤 尚史
東京工業大学
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宮本 恭幸
東京工業大学
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Arai Shigehisa
Department Of Physical Electronics Tokyo Institute Of Technology
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SATO Kuninori
National Institute for Fusion Science
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NAKAMURA Yuji
Graduate School of Energy Science, Kyoto University
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Asada Masahiro
Department of Neurosurgery, Chibune Hospital
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Yamahata Shoji
Ntt Photonics Laboratories
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Yamahata Shoji
Ntt Corp. Atsugi‐shi Jpn
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Saito Hisashi
Department Of Physical Electronics Tokyo Institute Of Technology
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Sato K
Asahi Glass Co. Ltd. Yokohama Jpn
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Sato K
Depertment Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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Sato K
Faculty Of Applied Biological Science Hiroshima University
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Sato K
National Institute For Fusion Science
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Asada Masahiro
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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Furuya Keiichi
Department Of Industiral Chemistry Faculty Of Engineering The University Of Tokyo
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Arai Shigehisa
Department Of Electrical And Electronics Engineering Tokyo Institute Of Technology
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町田 信也
東京工業大学大学院理工学研究科:科学技術振興機構crest
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Hattori Tetsuya
Department Of Physics Gakushuin University
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Hattori Tetsuya
Department Of Mathematics Faculty Of Science Rikkyo University
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MACHIDA Nobuya
Department of Physical Electronics, Tokyo Institute of Technology
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Sato Kuninori
Institute For Fusion Science
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Sato K
National Defense Acad. Yokosuka Jpn
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Sato K
Faculty Of Technology Tokyo Universily Of Agriculture And Technology
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KURISHIMA Kenji
NTT Photonics Laboratories, NTT Corporation
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Sasaki K
Nagoya Univ. Nagoya Jpn
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KASHIO Norihide
NTT Photonics Laboratories, NTT Corporation
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FUKAI YoshinoYoshino
NTT Photonics Laboratories, NTT Corporation
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CAO Ming
Department of Physical Electronics, Tokyo Institute of Technology
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SHINGAI Yasushi
Department of Physical Electronics, Tokyo Institute of Technology
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Fukai Yoshinoyoshino
Ntt Photonics Laboratories Ntt Corporation
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Sato K
Dept. Of Energy Engineering And Science Nagoya University
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Nakamura Y
Kyoto Univ. Uji Jpn
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KASHIMA Issei
Department of Physical Electronics, Tokyo Institute of Technology
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YAMAGAMI Shigeharu
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
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SUHARA Michihiko
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
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Kashima Issei
Department Of Physical Electronics Tokyo Institute Of Technology
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HONJI Hidetaka
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
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Cao Ming
Department Of Physical Electronics Tokyo Institute Of Technology
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Honji Hidetaka
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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Furuya K
Department Of Physical Electronics Graduate School Of Science And Engineering Tokyo Institute Of Tec
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SATO Kazuo
Faculty of Education, Tokusima University
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HARADA Yoshimichi
the Department of Physical Electronics, Tokyo Institute of Technology
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MIYAMOTO Yasuyuki
the Department of Physical Electronics, Tokyo Institute of Technology
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FURUYA Kazuhito
the Department of Physical Electronics, Tokyo Institute of Technology
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Kanazawa Toru
Department of Physical Electronics, Tokyo Institute of Technology
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Kokubo Atsushi
Depaetment Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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Kurishima Kenji
Ntt Photonics Laboratories Ntt Corporation
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Kashio Norihide
Ntt Photonics Laboratories Ntt Corporation
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Harada Y
Univ. Hyogo Himeji‐shi Jpn
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Kanazawa Toru
Department Of Physical Electronics Tokyo Institute Of Technology
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Suhara Michihiko
Department Of Electrical And Electronic Engineering Graduate School Of Science And Engineering Tokyo
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Sato Ken
Department Of Applied Physics Tokyo University Of Agriculture And Technology
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Shingai Yasushi
Department Of Physical Electronics Faculty Of Engineering Tokyo Institute Of Technology
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Hattori Tetsuya
Department Of Mathematics Faculty Of Science Osaka University
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Ravikumar K.g.
Department Of Physical Electronics Tokyo Institute Of Technology
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Ravikumar K.g.
The Advanced Tech. R&d Center Fujikura Ltd.
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Maeda Hiroshi
Department of Urology, Shinko Clinic
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Arai Shigehisa
Faculty Of Engineering Tokyo Institute Of Technology
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KINOSHITA SATORU
Department of Pediatrics, School of Medicine, Niigata University
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HIRAYAMA Hideki
Department of Physical Electronics, Tokyo Institute of Technology
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Kang Y
Konkuk Univ. Seoul Kor
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Nakamura Yuji
Department of Pharmacology, School of Medicine, Toho University, Japan
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Kang Young
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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Yamazaki Daisuke
Department Of Electrical And Communication Engineering Graduate School Of Engineering Tohoku Univers
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Yamazaki D
Tohoku Univ. Sendai Jpn
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ISHIDA Masashi
Department of Orthopaedics, Graduate School of Medical Science, Kyoto Prefectural University of Medi
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Tanaka Hiroaki
Department of Cardiovascular Medicine, Tottori University Faculty of Medicine
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Wernersson L‐e
Solid State Physics/nanometer Structure Consortium Lund University
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YAMAMOTO Ren
Department of Physical Electronics, Tokyo Institute of Technology
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TAKEUCHI Katsuhiko
Department of Physical Electronics, Tokyo Institute of Technology
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WERNERSSON Lars-Erik
Solid State Physics/Nanometer Structure Consortium, Lund University
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Nakamura Yuji
The Division of Cardiolagy, National Medical Center Hospital
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MIZUMOTO Tetsuya
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
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SUWA Akira
Department of Rheumatic Diseases, Tokyo Metropolitan Ohtsuka Hospital
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Nagase Masanori
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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WATANABE Masahiro
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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Hirayama Hideki
Department Of Physical Electronics Tokyo Institute Of Technology
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Nakagawa Ryo
Department of Biotechnology, Graduate School of Engineering, Nagoya University
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Yamaura Shinji
Department Of Electrical And Electronics Engineering Tokyo Institute Of Technology
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MIYAKE Yasunari
Department of Electrical and Electronics Engineering, Tokyo Institute of Technology
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Miyake Yasunari
Department Of Physical Electronics Tokyo Institute Of Technology
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Miyake Yasunari
Department Of Electrical And Electronics Engineering Tokyo Institute Of Technology
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KOHTOKU Masaki
Department of Physical Electronics, Tokyo Institute of Technology
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Tanaka Hiroaki
Department Of Cardiovascular Medicine Tottori University Fuculty Of Medicine
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Kinoshita Satoru
Department Of Physical Electronics Tokyo Institute Of Technology
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Yamazaki Daisuke
Department Of Applied Chemistry Faculty Of Engineering Gunma University
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KOKUBO Atsushi
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
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FUNAYAMA Miyako
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
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MORITA Takenori
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
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NAKAMURA Hifumi
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
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Suwa Akira
Department Of Physical Electronics Tokyo Institute Of Technology
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Kohtoku Masaki
Department Of Physical Electronics Tokyo Institute Of Technology
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Sugou Shigeo
Department Of Physical Electronics Tokyo Institute Of Technology
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Nakagawa Ryo
Department Of Physical Electronics Tokyo Institute Of Technology
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Nakagawa Ryo
Department Of Biotechnology Graduate School Of Engineering Nagoya University
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Ishida Masashi
Department Of Physical Electronics Tokyo Institute Of Technology
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Ishida Masashi
Department Of Chemistry Nagoya University
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Machida Nobuya
Department Of Chemistry Konan University
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Nakamura Hifumi
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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Funayama Miyako
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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Morita Takenori
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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NAITO Yoshiyuki
Department of Anesthesia, Kobe City General Hospital
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MORITA Tatsuo
Department of Physical Electronics, Tokyo Institute of Technology
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NAGATSUKA Hiromi
Department of Physical Electronics, Tokyo Institute of Technology
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ARAI Toshiki
the Department of Physical Electronics, Tokyo Institute of Technology
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YAMAGAMI Shigeharu
the Department of Physical Electronics, Tokyo Institute of Technology
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OKUDA Yoshifumi
the Department of Physical Electronics, Tokyo Institute of Technology
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HARADA Yoshimichi
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
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KOKUBO Atsushi
Depaetment of Electrical and Electronic Engineering, Tokyo Institute of Technology
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HONGO Hiroo
Depaetment of Electrical and Electronic Engineering, Tokyo Institute of Technology
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MIYAMOTO Yasuyuki
Depaetment of Electrical and Electronic Engineering, Tokyo Institute of Technology
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FURUYA Kazuhito
Depaetment of Electrical and Electronic Engineering, Tokyo Institute of Technology
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MATSUNUMA Takeshi
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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TAKEMURA Riichiro
the Department of Elec trical and Electronic Engineering, Faculty of Engineering, Tokyo Institute of
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NAGAO Chuma
Department of Electrical and Electric Engineering, Tokyo Institute of Technology
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OTAKE Toshihiko
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
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YOSHINAGA Jiroo
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
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Kinoshita S
Toshiba Corp. Yokohama Jpn
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Yoshinaga Jiroo
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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Nagatsuka Hiromi
Department Of Physical Electronics Tokyo Institute Of Technology
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Matsunuma T
Tokyo Inst. Technol. Tokyo Jpn
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Matsunuma Takeshi
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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Okuda Yoshifumi
The Department Of Physical Electronics Tokyo Institute Of Technology
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Furuya Kazuhito
Department Of Physical Electronics Tokyo Institute Of Technology
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Furuya Kazuhito
Department Of Electrical And Electronics Engineering Tokyo Institute Of Technology
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Naito Yoshiyuki
Department Of Anesthesia Kobe City General Hospital
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Naito Yoshiyuki
Department Of Physical Electronics Faculty Of Engineering Tokyo Institute Of Technology
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Morita Tatsuo
Department Of Physical Electronics Tokyo Institute Of Technology
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Morita Tatsuo
Department Of Applied Physics Waseda University
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Nakamura Yuji
Department Of Materials Engineering Graduate School Of Engineering The University Of Tokyo:crest Jap
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Nagao Chuma
Department Of Electrical And Electric Engineering Tokyo Institute Of Technology
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ISHIHARA Kanji
Department of Physical Electronics, Tokyo Institute of Technology
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UESAKA Katsumi
Department of Physical Electronics, Tokyo Institute of Technology
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MIYAUCHI Motoya
Department of Physical Electronics, Tokyo Institute of Technology
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Kameyama Atsuhi
Department of Physical Electronics, Tokyo Institute of Technology
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Machida Nobuya
Department Of Physical Electronics Tokyo Institute Of Technology:crest Japan Science And Technology
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Kinoshita Satoru
Department Of Child Neurology National Center Of Neurology And Psychiatry (ncnp)
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Miyamoto Yasuyuki
Department Of Physical Electronics Tokyo Institute Of Technology
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Miyauchi Motoya
Department Of Physical Electronics Tokyo Institute Of Technology
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TAKAHASHI Shinnosuke
Department of Physical Electronics, Tokyo Institute of Technology
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Suemasu Takeshi
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
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Ishihara Kanji
Department Of Physical Electronics Tokyo Institute Of Technology
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Uesaka Katsumi
Department Of Physical Electronics Tokyo Institute Of Technology
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Mizumoto Tetsuya
Department Of Eee Tokyo Institute Of Technology
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Mizumoto Tetsuya
Department Of Physical Electronics Faculty Of Engineering Tokyo Institute Of Technology
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Kang Young
Department Of Chemistry Sogang University
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Otake Toshihiko
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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Miyamoto Yasuyuki
Department Of Electrical And Electronics Engineering Tokyo Institute Of Technology
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Miyamoto Yasuyuki
Department Of Physical Electronics Faculty Of Engineering Tokyo Institute Of Technology
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Kameyama Atsuhi
Department Of Physical Electronics Tokyo Institute Of Technology
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Tanaka Hiroaki
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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Kang Young
Department Of Chemistry Chungbuk National University
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Tanaka Hiroaki
Department Of Biology Aichi University Of Education
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Nakamura Yuji
Department Of Agricultural Chemistry Faculty Of Agriculture Kyushu University
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Nakamura Yuji
The Department Of Internal Medicine International Medical Center Of Japan
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Suemasu Takeshi
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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Watanabe Masahiro
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
著作論文
- InP Hot Electron Transistors with a Buried Metal Gate
- Fabrication of Ultrafine X-Ray Mask Using Precise Crystal Growth Technique
- High-performance and reliable InP/InGaAs HBTs operating at high current density (Electron devices: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
- High-performance and reliable InP/InGaAs HBTs operating at high current density (Silicon devices and materials: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
- Light Emission from Quantum-Box Structure by Current Injection
- High-Quality n-GaInAs Grown by OMVPE Using Si_2H_6 by High-Velocity Flow
- Estimation of Collector Current Spreading in InGaAs SHBT Having 75-nm-Thick Collector
- Current Gain and Voltage Gain in Hot Electron Transistors without Base Layer(THz Devices,Heterostructure Microelectronics with TWHM2005)
- Wrapped Alignment Marks for Fabrication of Interference/Diffraction Hot Electron Devices
- W/Cr/Au/SiO_2 Composite Alignment Mark for Fabrication of Interference/Diffraction Hot Electron Devices
- Nanostrueture Alignment for Hot Electron Interference/Diffraction Devices
- Ultrafine Fabrication Technique for Hot Electron Interference/Diffraction Devices
- Effect of Spacer Layer Thickness on Energy Level Width Narrowing in GaInAs/InP Resonant Tunneling Diodes Grown by Organo-Metallic Vapor Phase Epitaxy
- Transport Anisotropy of Si Delta-Doped Layer in InP Grown by OMVPE
- Increase in Collector Current in Hot-Electron Transistors Controlled by Gate Bias
- Theoretical Gain of Quantum-Well Wire Lasers
- Febrication of InP/GaInAs Double Heterojunction Bipolar Transistors with a 0.1-μm-Wide Emitter : Semiconductors
- InP DHBT with 0.5μm Wide Emitter alongDirection toward BM-HBT with Narrow Emitter(Joint Special Issue on Heterostructure Microelectronics with TWHM 2000)
- Reduction of Base-Collector Capacitance inSubmicron InP/GalnAs Heterojunction Bipolar Transistors with Buried Tungsten Wires : Semiconductors
- Peak Width Analysis of Current-Voltage Characteristics of Triple-Barrier Resonant Tunneling Diodes
- First Fabrication of GaInAs/InP Buried Metal Heterojunction Bipolar Transistor and Reduction of Base-Collector Capacitance
- A 25-nm-pitch GaInAs/InP Buried Structure Using Calixarene Resist
- High Peak-to-Valley Current Ratio GaInAs/GaInP Resonant Tunneling Diodes
- Characterization of GaInAs/InP Triple-Barrier Resonant Tunneling Diodes Grown by Organo-Metallic Vapor Phase Epitaxy for High-Temperature Estimation of Phase Coherent Length of Electrons
- Seventy-nm-Pitch Patterning on CaF_2 by e-beam Exposure
- Current-Voltage Characteristics of Triple-Barrier Resonant Tunnnel Diodes Including Coherent and Incoherent Tunneling Processes (Special Issue on Quantum Effect Devices and Their Fabrication Technologies)
- High Temperature Estimation of Phase Coherent Length of Hot Electron Using GaInAs/InP Triple-Barrier Resonant Tunneling Diodes Grown by OMVPE
- Monolayer Steps Formation in InP and GaInAs by OMVPE and Reduction of Resonant Energy Width in GaInAs/InP RTDs
- Electrical Properties of 100 nm Pitch Cr/Au Fine Electrodes with 40 nm Width on GaInAs
- Fabrication of Vertical InGaAs Channel Metal-Insulator-Semiconductor Field Effect Transistor with a 15-nm-Wide Mesa Structure and a Drain Current Density of 7MA/cm^2
- 招待講演 InGaAs/InP MISFET with epitaxially grown source (Silicon devices and materials)
- 招待講演 InGaAs/InP MISFET with epitaxially grown source (Electron devices)
- Improvement in Gate Insulation in InP Hot Electron Transistors for High Transconductance and High Voltage Gain
- Crystal Growth of InP on a Gd_3Ga_5O_ Substrate by Organometallic Chemical Vapor Deposition
- GaInAs/InP Hot Electron Transistors Grown by OMVPE
- Estimation of Phase Coherent Length of Hot Electrons in GaInAs Using Resonant Tunneling Diodes
- GaInAsP/InP Single Quantum-Well Lasers by OMVPE
- Conditions for OMVPE Growth of GaInAsP/InP Crystal
- Estimation of collector current spreading in InGaAs SHBT having 75-nm-thick collector
- Estimation of collector current spreading in InGaAs SHBT having 75-nm-thick collector
- Improvement of Regrown Interface in InP Organo-Metallic Vapor Phase Epitaxy
- Reduction of Base-Collector Capacitance in InP/InGaAs DHBT with Buried SiO2 Wires