Furuya Kazuhito | Department Of Electrical And Electronic Engineering
スポンサーリンク
概要
関連著者
-
Furuya Kazuhito
Department Of Electrical And Electronic Engineering
-
FURUYA Kazuhito
Department of Physical Electronics, Tokyo Institute of Technology
-
Miyamoto Yasuyuki
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
-
MIYAMOTO Yasuyuki
Department of Physical Electronics, Tokyo Institute of Technology
-
Furuya K
Department Of Physical Electronics Tokyo Institute Of Technology
-
Miyamoto Y
Department Of Physical Electronics Tokyo Institute Of Technology
-
Suhara M
Tokyo Metropolitan Univ. Tokyo Jpn
-
Furuya K
Department Of Physical Electronics Graduate School Of Science And Engineering Tokyo Institute Of Tec
-
Furuya Keiichi
Department Of Industiral Chemistry Faculty Of Engineering The University Of Tokyo
-
SUHARA Michihiko
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
-
Machida Nobuya
Department Of Chemistry Konan University
-
Hongo Hiroo
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
-
MACHIDA Nobuya
Department of Physical Electronics, Tokyo Institute of Technology
-
Hongo H
Nec Corp. Ibaraki Jpn
-
Kikegawa Nobutaka
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
-
Takemura Riichiro
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
-
齋藤 尚史
東京工業大学
-
町田 信也
東京工業大学大学院理工学研究科:科学技術振興機構crest
-
Ikeda Yoshihiro
Department Of Cardiology Himeji Cardiovascular Center
-
TAKEMURA Riichiro
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
-
古屋 一仁
東京工業大学院理工学研究科
-
Ikeda Yoshihiro
Department of Cardiology, Himeji Cardiovascular Center
-
SUZUKI Jun
Department of Health Care Chemistry, College of Environmental Health, Azabu University
-
Saito Hisashi
Department Of Physical Electronics Tokyo Institute Of Technology
-
Suzuki Jun
Department Of Cardiovascular Medicine Tohoku University Graduate School Of Medicine
-
Ikeda Y
Seh Isobe R&d Center Shin-etsu Handotai Co. Ltd.
-
Suzuki J
Tokyo Inst. Technol. Tokyo Jpn
-
Nagase Masanori
Department Of Physical Electronics Graduate School Of Science And Engineering Tokyo Institute Of Tec
-
Ikeda Yoshihiro
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
-
Suzuki J
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
-
Zhang B
Research Center For Nano-device And System Nagoya Institute Of Technology
-
SUHARA Michihiko
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
-
Oobo Takashi
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
-
Machida N
Konan Univ. Kobe
-
KIKEGAWA Nobutaka
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
-
SUZUKI Hiroyuki
Department of Oral and Maxillofacial Surgery, Hamamatsu University School of Medicine
-
KOBAYASHI Takashi
Department of Information Engineering, Graduate School of Information Science, Nagoya University
-
Kobayashi Takashi
Department Of Cardiology Kobe City Medical Center General Hospital
-
Nagase M
Ntt Basic Research Laboratories Ntt Corporation
-
Asada Masahiro
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
-
Kobayashi T
Ntt Corp. Kanagawa Jpn
-
Wernersson L‐e
Solid State Physics/nanometer Structure Consortium Lund University
-
SAMUELSON Lars
Department of Solid State Physics, University of Lund
-
SUEMATSU Yasuharu
Department of Physical Electronics, Tokyo Institute of Technology
-
Suematsu Yasuharu
Department Of Electronic Engineering Kohgakuin University
-
OOBO Takashi
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
-
Arai T
Department Of Physical Electronics Tokyo Institute Of Technology
-
Samuelson L
Lund Univ. Lund Swe
-
Samuelson Lars
ルンド大学固体物理学科
-
Suzuki Hiroyuki
Department Of Physical Electronics Tokyo Institute Of Technology
-
Suzuki Hiroyuki
Department Of Applied Physics School Of Science And Engineering Waseda University:(present Address)h
-
ARAI Toshiki
Department of Physical Electronics, Tokyo Institute of Technology
-
Saito Hisahi
Department Of Physical Electronics Tokyo Institute Of Technology
-
Kobayashi Takashi
Department Of Physical Electronics Tokyo Institute Of Technology
-
Talahashi Shinnosuke
Department of Physical Electronics, Tokyo Institute of Technology
-
SAKAI Norio
Department of Molecular and Pharmacological Neuroscience, Graduate School of Biomedical Sciences, Hi
-
SATO Ken
Department of Dermatology, Iwate Medical University School of Medicine
-
SATO Kuninori
National Institute for Fusion Science
-
Asada Masahiro
Department of Neurosurgery, Chibune Hospital
-
Sakai N
Yokohama National Univ. Yokohama Jpn
-
Seifert W
Lund Univ. Lund Swe
-
Sato K
Asahi Glass Co. Ltd. Yokohama Jpn
-
Kang Y
Konkuk Univ. Seoul Kor
-
Sato K
Depertment Of Electrical And Electronic Engineering Tokyo Institute Of Technology
-
Kang Young
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
-
Gustafson Boel
Department Of Solid State Physics University Of Lund
-
Sato K
Faculty Of Applied Biological Science Hiroshima University
-
Sato K
National Institute For Fusion Science
-
Hattori Tetsuya
Depaetment Of Electrical And Electronic Engineering Tokyo Institute Of Technology
-
Hattori Tetsuya
Department Of Physics Gakushuin University
-
Hattori Tetsuya
Department Of Mathematics Faculty Of Science Rikkyo University
-
WERNERSSON Lars-Erik
Department of Solid State Physics, University of Lund
-
CARLSSON Niclas
Department of Solid State Physics, University of Lund
-
SEIFERT Werner
Department of Solid State Physics, University of Lund
-
Sato Kuninori
Institute For Fusion Science
-
Sato K
National Defense Acad. Yokosuka Jpn
-
Sato K
Faculty Of Technology Tokyo Universily Of Agriculture And Technology
-
Sasaki K
Nagoya Univ. Nagoya Jpn
-
HATTORI Takeo
New Industry Creation Hatchery Center, Tohoku University
-
Hattori Takashi
Central Research Laboratory Hitachi Ltd.
-
Carlsson Niclas
Department Of Solid State Physics University Of Lund
-
CAO Ming
Department of Physical Electronics, Tokyo Institute of Technology
-
Seifert Werner
Department Of Solid State Physics University Of Lund
-
Hattori T
New Industry Creation Hatchery Center Tohoku University
-
Sato K
Dept. Of Energy Engineering And Science Nagoya University
-
YAMAGAMI Shigeharu
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
-
Kashima Issei
Department Of Physical Electronics Tokyo Institute Of Technology
-
HONJI Hidetaka
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
-
Cao Ming
Department Of Physical Electronics Tokyo Institute Of Technology
-
Suwa Akira
Department Of Internal Medicine And Pathology School Of Medicine Keio University
-
Nakagawa Ryo
Department Of Biotechnology Graduate School Of Engineering Nagoya University
-
Tamura Shigeo
Department Of Medicine And Clinical Science Gunma University Graduate School Of Medicine
-
Honji Hidetaka
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
-
Seifert W
Univ. Lund
-
SATO Kazuo
Faculty of Education, Tokusima University
-
Kanazawa Toru
Department of Physical Electronics, Tokyo Institute of Technology
-
Furuya Kazuhito
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
-
Seifert W
ルンド大学固体物理学科
-
ZHANG Bingyang
Quantum Effect Electronics Research Center, Tokyo Institute of Technology
-
WATANABE Masahiro
Quantum Effect Electronics Research Center, Tokyo Institute of Technology
-
Zhang Bingyang
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
-
VAZQUEZ Francisco
Quantum Effect Electronics Research Center, Tokyo Institute of Technology
-
YAMAGAMI Shigeharu
Silicon Systems Research Labs.
-
Wernersson Lars-erik
Department Of Electrical And Information Technology Lund University
-
Ravikumar K.g.
Department Of Physical Electronics Tokyo Institute Of Technology
-
Ravikumar K.g.
The Advanced Tech. R&d Center Fujikura Ltd.
-
宮本 恭幸
東京工業大学
-
Arai Shigehisa
Department Of Physical Electronics Tokyo Institute Of Technology
-
Arai Shigehisa
Faculty Of Engineering Tokyo Institute Of Technology
-
NAKAMURA Yuji
Graduate School of Energy Science, Kyoto University
-
KINOSHITA SATORU
Department of Pediatrics, School of Medicine, Niigata University
-
Watanabe M
Hiroshima Univ. Higashi‐hiroshima Jpn
-
Nakamura Yuji
Department of Pharmacology, School of Medicine, Toho University, Japan
-
Arai Shigehisa
Department Of Electrical And Electronics Engineering Tokyo Institute Of Technology
-
Yamazaki Daisuke
Department Of Electrical And Communication Engineering Graduate School Of Engineering Tohoku Univers
-
Yamazaki D
Tohoku Univ. Sendai Jpn
-
ISHIDA Masashi
Department of Orthopaedics, Graduate School of Medical Science, Kyoto Prefectural University of Medi
-
Tanaka Hiroaki
Department of Cardiovascular Medicine, Tottori University Faculty of Medicine
-
GUSTAFSSON Anders
Department of Solid State Physics, University of Lund
-
MALM Jan-Olle
Department of Inorganic Chemistry 2, University of Lund
-
LITWIN Andrej
Department of Solid State Physics, University of Lund
-
HANSSON Bjorn
Nanometer Structure Consortium, Lund University
-
WERNERSSON Lars-Erik
Nanometer Structure Consortium, Lund University
-
Watanabe Mahiko
Department Of Applied Physics And Chemistry Faculty Of Engineering Hiroshima University
-
Nagase Masanori
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
-
SAITO WATARU
Department of Orthopaedic Surgery, Kitasato University, School of Medicine
-
Saito Wataru
Department Of Ophthalmology And Visual Sciences Hokkaido University Graduate School Of Medicine
-
WATANABE Masahiro
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
-
Nakagawa Ryo
Department of Biotechnology, Graduate School of Engineering, Nagoya University
-
SHINGAI Yasushi
Department of Physical Electronics, Tokyo Institute of Technology
-
Yamaura Shinji
Department Of Electrical And Electronics Engineering Tokyo Institute Of Technology
-
Matsuura Hiroshi
Department Of Applied Biological Chemistry Graduate School Of Agricultural And Life Sciences The Uni
-
KOHTOKU Masaki
Department of Physical Electronics, Tokyo Institute of Technology
-
Tanaka Hiroaki
Department Of Cardiovascular Medicine Tottori University Fuculty Of Medicine
-
Kinoshita Satoru
Department Of Physical Electronics Tokyo Institute Of Technology
-
Gustafsson Anders
Department Of Solid State Physics University Of Lund
-
Hansson Bjorn
Nanometer Structure Consortium Lund University
-
Nakamura Y
Kyoto Univ. Uji Jpn
-
Yamazaki Daisuke
Department Of Applied Chemistry Faculty Of Engineering Gunma University
-
KASHIMA Issei
Department of Physical Electronics, Tokyo Institute of Technology
-
NAGATSUKA Hiroyuki
Department of Physical Electronics, Graduate School of Science and Engineering, Tokyo Institute of T
-
KOKUBO Atsushi
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
-
FUNAYAMA Miyako
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
-
MORITA Takenori
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
-
Nagatsuka Hiroyuki
Department Of Physical Electronics Graduate School Of Science And Engineering Tokyo Institute Of Tec
-
NAKAMURA Hifumi
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
-
Kohtoku Masaki
Department Of Physical Electronics Tokyo Institute Of Technology
-
Vazquez F
Electrotechnical Lab. Miti Ibaraki Jpn
-
Sugou Shigeo
Department Of Physical Electronics Tokyo Institute Of Technology
-
Nakagawa Ryo
Department Of Physical Electronics Tokyo Institute Of Technology
-
Yamamoto Ren
Department Of Physical Electronics Tokyo Institute Of Technology
-
Litwin A
Department Of Solid State Physics University Of Lund
-
Malm Jan-olle
Department Of Inorganic Chemistry 2 University Of Lund
-
Tamura Shigeo
Department Of Physical Electronics
-
Ishida Masashi
Department Of Physical Electronics Tokyo Institute Of Technology
-
Ishida Masashi
Department Of Chemistry Nagoya University
-
Machida Nobuya
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
-
Machida Nobuya
Department Of Physical Electronics Graduate School Of Science And Engineering Tokyo Institute Of Tec
-
Nakamura Hifumi
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
-
Funayama Miyako
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
-
Morita Takenori
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
-
MORITA Tatsuo
Department of Physical Electronics, Tokyo Institute of Technology
-
NAGATSUKA Hiromi
Department of Physical Electronics, Tokyo Institute of Technology
-
HARADA Yoshimichi
the Department of Physical Electronics, Tokyo Institute of Technology
-
HARADA Yoshimichi
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
-
MATSUNUMA Takeshi
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
-
NAGAO Chuma
Department of Electrical and Electric Engineering, Tokyo Institute of Technology
-
OTAKE Toshihiko
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
-
YOSHINAGA Jiroo
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
-
Kinoshita S
Toshiba Corp. Yokohama Jpn
-
Yoshinaga Jiroo
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
-
Nagatsuka Hiromi
Department Of Physical Electronics Tokyo Institute Of Technology
-
Matsunuma T
Tokyo Inst. Technol. Tokyo Jpn
-
Matsunuma Takeshi
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
-
Furuya Kazuhito
Department Of Physical Electronics Tokyo Institute Of Technology
-
Furuya Kazuhito
Department Of Electrical And Electronics Engineering Tokyo Institute Of Technology
-
ZHANG Bingyang
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
-
KARASAWA Shinya
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
-
Morita Tatsuo
Department Of Physical Electronics Tokyo Institute Of Technology
-
Morita Tatsuo
Department Of Applied Physics Waseda University
-
Nakamura Yuji
Department Of Materials Engineering Graduate School Of Engineering The University Of Tokyo:crest Jap
-
Suemasu Takashi
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
-
Nagao Chuma
Department Of Electrical And Electric Engineering Tokyo Institute Of Technology
-
Kokubo Atsushi
Depaetment Of Electrical And Electronic Engineering Tokyo Institute Of Technology
-
ISHIHARA Kanji
Department of Physical Electronics, Tokyo Institute of Technology
-
UESAKA Katsumi
Department of Physical Electronics, Tokyo Institute of Technology
-
MIYAUCHI Motoya
Department of Physical Electronics, Tokyo Institute of Technology
-
KOIZUMI Ryuya
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
-
Kameyama Atsuhi
Department of Physical Electronics, Tokyo Institute of Technology
-
Koizumi Ryuya
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
-
FURUTA Kazuhito
Department of Physical Electronics, Graduate School of Science and Engineering,Tokyo Institute of Te
-
KURAHASHI Masaki
Department of Physical Electronics, Graduate School of Science and Engineering,Tokyo Institute of Te
-
Machida Nobuya
Department Of Physical Electronics Tokyo Institute Of Technology:crest Japan Science And Technology
-
Machida Nobuya
Department Of Solid State Physics
-
Kurahashi Masaki
National Institute For Materials Science
-
Wernersson Lars-erik
Solid State Physics Lund University
-
Kinoshita Satoru
Department Of Child Neurology National Center Of Neurology And Psychiatry (ncnp)
-
Miyamoto Yasuyuki
Department Of Physical Electronics Tokyo Institute Of Technology
-
Miyauchi Motoya
Department Of Physical Electronics Tokyo Institute Of Technology
-
TAKAHASHI Shinnosuke
Department of Physical Electronics, Tokyo Institute of Technology
著作論文
- Gated Tunneling Structures with Buried Tungsten Grating Adjacent to Semiconductor Heterostructures
- Gated Resonant Tunneling Structures with Buried Tungsten Grating Adjacent to Semiconductor Heterostructures
- Proposal for a Solid State Biprism Device
- Fabrication of Ultrafine X-Ray Mask Using Precise Crystal Growth Technique
- Light Emission from Quantum-Box Structure by Current Injection
- High-Quality n-GaInAs Grown by OMVPE Using Si_2H_6 by High-Velocity Flow
- Estimation of Collector Current Spreading in InGaAs SHBT Having 75-nm-Thick Collector
- Current Gain and Voltage Gain in Hot Electron Transistors without Base Layer(THz Devices,Heterostructure Microelectronics with TWHM2005)
- Phase Coherence and Temperature Dependence of Current-Voltage Characteristics at Low-Current and Low-Voltage Region of Double-Barrier Resonant-Tunneling Diode
- Phase-Breaking Effect Appearing in the Current-Voltage Characteristics of Double-Barrier Resonant Tunneling Diodes - Theoretical Fitting Over Four Orders of Magnitude -
- Phase Breaking Effect Appearing in I-V Characteristics of Double-Barrier Resonant-Tunneling Diodes : Theoretical Fitting Over Four Orders of Magnitude
- Wrapped Alignment Marks for Fabrication of Interference/Diffraction Hot Electron Devices
- W/Cr/Au/SiO_2 Composite Alignment Mark for Fabrication of Interference/Diffraction Hot Electron Devices
- Nanostrueture Alignment for Hot Electron Interference/Diffraction Devices
- Ultrafine Fabrication Technique for Hot Electron Interference/Diffraction Devices
- Effect of Spacer Layer Thickness on Energy Level Width Narrowing in GaInAs/InP Resonant Tunneling Diodes Grown by Organo-Metallic Vapor Phase Epitaxy
- Transport Anisotropy of Si Delta-Doped Layer in InP Grown by OMVPE
- Febrication of InP/GaInAs Double Heterojunction Bipolar Transistors with a 0.1-μm-Wide Emitter : Semiconductors
- Reduction of Base-Collector Capacitance inSubmicron InP/GalnAs Heterojunction Bipolar Transistors with Buried Tungsten Wires : Semiconductors
- Peak Width Analysis of Current-Voltage Characteristics of Triple-Barrier Resonant Tunneling Diodes
- First Fabrication of GaInAs/InP Buried Metal Heterojunction Bipolar Transistor and Reduction of Base-Collector Capacitance
- Characterization of GaInAs/InP Triple-Barrier Resonant Tunneling Diodes Grown by Organo-Metallic Vapor Phase Epitaxy for High-Temperature Estimation of Phase Coherent Length of Electrons
- Seventy-nm-Pitch Patterning on CaF_2 by e-beam Exposure
- High Temperature Estimation of Phase Coherent Length of Hot Electron Using GaInAs/InP Triple-Barrier Resonant Tunneling Diodes Grown by OMVPE
- Monolayer Steps Formation in InP and GaInAs by OMVPE and Reduction of Resonant Energy Width in GaInAs/InP RTDs
- Electrical Properties of 100 nm Pitch Cr/Au Fine Electrodes with 40 nm Width on GaInAs
- Fabrication of Vertical InGaAs Channel Metal-Insulator-Semiconductor Field Effect Transistor with a 15-nm-Wide Mesa Structure and a Drain Current Density of 7MA/cm^2
- 招待講演 InGaAs/InP MISFET with epitaxially grown source (Silicon devices and materials)
- 招待講演 InGaAs/InP MISFET with epitaxially grown source (Electron devices)
- Theoretical Relation between Spatial Resolution and Efficiency of Detection in Scanning Hot Electron Microscope
- Shortening of Detection Time for Observation of Hot Electron Spatial Distribution by Scanning Hot Electron Microscopy
- Design and Experimental Characteristics of n-St/CaF_2/Au Hot Electron Emitter for Use in Scanning Hot Electron Microscopy
- Comparison between Fermi-Dirac and Boltzmann Methods for Band-bending Calculations of Si/CaF_2/Au Hot Electron Emitter
- Characteristics and Reduction of Noise in Scanning Hot Electron Microscopy
- GaInAs/InP Hot Electron Transistors Grown by OMVPE
- Evaluation of Hot Electron Coherent Length Using Well Width Dependence of the Resonance Characteristics of Resonant Tunneling Diodes
- Estimation of Phase Coherent Length of Hot Electrons in GaInAs Using Resonant Tunneling Diodes
- GaInAsP/InP Single Quantum-Well Lasers by OMVPE
- Conditions for OMVPE Growth of GaInAsP/InP Crystal
- Vertical InGaAs Channel Metal--Insulator--Semiconductor Field Effect Transistor with High Current Density
- Current Peak Characteristics of Triple-Barrier Resonant-Tanneling Diodes with and without Phase Breaking : Semiconductors
- Possibility of High-Temperature Evaluation of Phase Coherent Length of Hot Electrons in Triple-Barrier Resonant Tunneling Diodes
- Estimation of collector current spreading in InGaAs SHBT having 75-nm-thick collector
- Estimation of collector current spreading in InGaAs SHBT having 75-nm-thick collector
- Wet Chemical Etching for Ultrafine Periodic Structure : Rectangular InP Corrugations of 70 nm Pitch and 100 nm Depth : Etching and Deposition Technology
- Analysis of Phase Breaking Effect in Resonant Tunneling Diodes Using Correlation Function
- Coherent Hot-Electron Emitter
- Observation of InP Surfaces after (NH_4)_2S_x Treatment by a Scanning Tunneling Microscope
- Influence of Impurities on the Performance of Doped-Well GaInAs/InP Resonant Tunneling Diodes
- Analysis of Phase-Breaking Effects in Triple-Barrier Resonant-Tunneling Diodes
- High Peak-to-Valley Current Ratio GaInAs/GaInP Resonant Tunneling Diodes
- Theoretical Study of Resonant Tunneling Diodes with Impurity Ions Located in Wells
- Wavefront Spread of Hot Electrons Generated by Planer Tunnel Emitters
- Improvement of Organometallic Vapor Phase Epitaxy Regrown GaInAs/InP Heterointerface by Surface Treatment
- Coherent Electron Devices
- InP Hot Electron Transistors with Emitter Mesa Fabricated between Gate Electrodes for Reduction in Emitter-Gate Gate-Leakage Current
- Increase in Collector Current in Hot-Electron Transistors Controlled by Gate Bias
- Proposal of a Technique to Detect Subsurface Hot Electrons with a Scanning Probe Microscope
- InP Hot Electron Transistors with a Buried Metal Gate
- Fabrication of GaInAs/InP Heterojunction Bipolar Transistors with a Single Tungsten Wire as Collector Electrode
- InP/InGaAs Hot Electron Transistors with Insulated Gate
- Design and Simulation of Hot-Electron Diffraction Observation Using Scanning Probe: Quantitative Evaluation of Observation Possibility
- Estimation of Lateral Resolution in Scanning Hot Electron Microscopy
- Wet Chemical Etching for Ultrafine Periodic Structure: Rectangular InP Corrugations of 70 nm Pitch and 100 nm Depth
- Improvement in Gate Insulation in InP Hot Electron Transistors for High Transconductance and High Voltage Gain
- Shortening of Detection Time for Observation of Hot Electron Spatial Distribution by Scanning Hot Electron Microscopy
- Transient Response of the Aharonov-Bohm Effect