Increase in Collector Current in Hot-Electron Transistors Controlled by Gate Bias
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概要
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A current density of 90 kA/cm2 was observed in hot-electron transistors controlled by gate bias. In these transistors, the base layer of a conventional hot-electron transistor was eliminated to minimize the scattering. Electron emission from the emitter was controlled by positively biased Schottky gate electrodes located on both sides of the emitter mesa. Using electron-beam lithography, emitters with an effective width of 25 nm and surrounded by gates were fabricated to obtain saturated $I$–$V$ characteristics. In a previous study, the observed current density for current amplification was approximately 10 A/cm2 at 30 K, although a resonant tunneling diode using the same epitaxial structure showed a 1 kA/cm2 peak current density. Using a 1.75-nm-thick AlAs barrier, the oxidation of the emitter barrier was prevented and a collector-current density of 90 kA/cm2 and a clear negative differential resistance were observed at 30 K. A current gain of 7 and an open-circuit voltage gain of 10 were also confirmed when the collector-current density was 10 kA/cm2.
- Japan Society of Applied Physicsの論文
- 2007-03-25
著者
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Kashima Issei
Department Of Physical Electronics Tokyo Institute Of Technology
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Suwa Akira
Department Of Internal Medicine And Pathology School Of Medicine Keio University
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Furuya Kazuhito
Department Of Electrical And Electronic Engineering
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Miyamoto Yasuyuki
Department Of Electrical And Electronic Engineering
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Kashima Issei
Department of Physical Electronics, Tokyo Institute of Technology, O-okayama, Meguro-ku, Tokyo 152-8552, Japan
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Furuya Kazuhito
Department of Physical Electronics, Tokyo Institute of Technology, O-okayama, Meguro-ku, Tokyo 152-8552, Japan
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Suwa Akira
Department of Physical Electronics, Tokyo Institute of Technology, O-okayama, Meguro-ku, Tokyo 152-8552, Japan
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