Monte Carlo Analysis of Base Transit Times of InP/GaInAs Heterojunction Bipolar Transistors with Ultrathin Graded Bases

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概要

• 論文の詳細を見る

• The base transit times of an InP/GaInAs heterojunction bipolar transistor (HBT) with an ultrathin and heavily doped base are investigated by carrying out a Monte Carlo (MC) simulation. The acceleration of electrons due to a conduction-band discontinuity between the emitter and base is taken into consideration. Scattering caused by the spontaneous emission of hole plasmons considerably increases the base transit time even when the thickness of the base is 20 nm. Band-gap grading in the base effectively sweeps slow electrons into the collector, and the increase in the base transit time is partially suppressed. The MC simulation shows that when the band-gap grading is just twice the thermal energy, the transit time of the 20-nm-thick base decreases by 40%.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2010-02-25

著者

• Yamada Masayuki

  Department Of Polymer Chemistry Tokyo Institute Of Technology

• Miyamoto Yasuyuki

  Department Of Electrical And Electronic Engineering

• Takafumi Uesawa

  Department of Physical Electronics, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan

• Uesawa Takafumi

  Department of Physical Electronics, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan

• Kazuhito Furuya

  Department of Physical Electronics, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan

• Masayuki Yamada

  Department of Physical Electronics, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan

• Yasuyuki Miyamoto

  Department of Physical Electronics, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan

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