High Open-Circuit Voltage Gain in Vertical InGaAs Channel Metal-Insulator-Semiconductor Field-Effect Transistor Using Heavily Doped Drain Region and Narrow Channel Mesa (Special Issue : Solid State Devices and Materials)

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概要

• 論文の詳細を見る
• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文

著者

• Miyamoto Yasuyuki

  Department Of Electrical And Electronic Engineering

• Hirai Jun

  Department Of Applied Physics Graduate School Of Engineering Osaka City University

• Kashiwano Masashi

  Department of Physical Electronics, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan

• Fujimatsu Motohiko

  Department of Physical Electronics, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan

• IKEDA Shunsuke

  Department of Energy Sciences, Tokyo Institute of Technology

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• Nanostrueture Alignment for Hot Electron Interference/Diffraction Devices
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• Effect of Spacer Layer Thickness on Energy Level Width Narrowing in GaInAs/InP Resonant Tunneling Diodes Grown by Organo-Metallic Vapor Phase Epitaxy
• Transport Anisotropy of Si Delta-Doped Layer in InP Grown by OMVPE
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• Febrication of InP/GaInAs Double Heterojunction Bipolar Transistors with a 0.1-μm-Wide Emitter : Semiconductors
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• First Fabrication of GaInAs/InP Buried Metal Heterojunction Bipolar Transistor and Reduction of Base-Collector Capacitance
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• InAs Thin-Channel High-Electron-Mobility Transistors with Very High Current-Gain Cutoff Frequency for Emerging Submillimeter-Wave Applications
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