Kashiwano Masashi | Department of Physical Electronics, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan
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概要
- Kashiwano Masashiの詳細を見る
- 同名の論文著者
- Department of Physical Electronics, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japanの論文著者
関連著者
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Miyamoto Yasuyuki
Department Of Electrical And Electronic Engineering
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Hirai Jun
Department Of Applied Physics Graduate School Of Engineering Osaka City University
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Kashiwano Masashi
Department of Physical Electronics, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan
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Fujimatsu Motohiko
Department of Physical Electronics, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan
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Ikeda Shunsuke
Department Of Physical Electronics Tokyo Institute Of Technology
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Hirai Jun
Department of Physical Electronics, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan
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IKEDA Shunsuke
Department of Energy Sciences, Tokyo Institute of Technology
著作論文
- High Open-Circuit Voltage Gain in Vertical InGaAs Channel Metal--Insulator--Semiconductor Field-Effect Transistor Using Heavily Doped Drain Region and Narrow Channel Mesa
- High Open-Circuit Voltage Gain in Vertical InGaAs Channel Metal-Insulator-Semiconductor Field-Effect Transistor Using Heavily Doped Drain Region and Narrow Channel Mesa (Special Issue : Solid State Devices and Materials)