Hirai Jun | Department of Physical Electronics, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan

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概要

関連著者

Ikeda Shunsuke
Department Of Physical Electronics Tokyo Institute Of Technology
Miyamoto Yasuyuki
Department Of Electrical And Electronic Engineering
Hirai Jun
Department Of Applied Physics Graduate School Of Engineering Osaka City University
Hirai Jun
Department of Physical Electronics, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan
Kashiwano Masashi
Department of Physical Electronics, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan
Fujimatsu Motohiko
Department of Physical Electronics, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan

著作論文

High Open-Circuit Voltage Gain in Vertical InGaAs Channel Metal--Insulator--Semiconductor Field-Effect Transistor Using Heavily Doped Drain Region and Narrow Channel Mesa

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