Miyamoto Yasuyuki | Department Of Electrical And Electronic Engineering
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概要
関連著者
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Miyamoto Yasuyuki
Department Of Electrical And Electronic Engineering
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Furuya Kazuhito
Department Of Electrical And Electronic Engineering
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Miyamoto Yasuyuki
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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MIYAMOTO Yasuyuki
Department of Physical Electronics, Tokyo Institute of Technology
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FURUYA Kazuhito
Department of Physical Electronics, Tokyo Institute of Technology
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Miyamoto Y
Department Of Physical Electronics Tokyo Institute Of Technology
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Furuya K
Department Of Physical Electronics Tokyo Institute Of Technology
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Suhara M
Tokyo Metropolitan Univ. Tokyo Jpn
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SUHARA Michihiko
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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Hongo Hiroo
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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Hongo H
Nec Corp. Ibaraki Jpn
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齋藤 尚史
東京工業大学
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Saito Hisashi
Department Of Physical Electronics Tokyo Institute Of Technology
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Takemura Riichiro
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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SUZUKI Jun
Department of Health Care Chemistry, College of Environmental Health, Azabu University
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Suzuki Jun
Department Of Cardiovascular Medicine Tohoku University Graduate School Of Medicine
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Suzuki J
Tokyo Inst. Technol. Tokyo Jpn
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SUEMATSU Yasuharu
Department of Physical Electronics, Tokyo Institute of Technology
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Suematsu Yasuharu
Department Of Electronic Engineering Kohgakuin University
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Suzuki J
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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TAKEMURA Riichiro
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
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Oobo Takashi
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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SUZUKI Hiroyuki
Department of Oral and Maxillofacial Surgery, Hamamatsu University School of Medicine
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KOBAYASHI Takashi
Department of Information Engineering, Graduate School of Information Science, Nagoya University
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Kobayashi Takashi
Department Of Cardiology Kobe City Medical Center General Hospital
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Kobayashi T
Ntt Corp. Kanagawa Jpn
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OOBO Takashi
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
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Arai T
Department Of Physical Electronics Tokyo Institute Of Technology
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Suzuki Hiroyuki
Department Of Physical Electronics Tokyo Institute Of Technology
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Suzuki Hiroyuki
Department Of Applied Physics School Of Science And Engineering Waseda University:(present Address)h
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ARAI Toshiki
Department of Physical Electronics, Tokyo Institute of Technology
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Saito Hisahi
Department Of Physical Electronics Tokyo Institute Of Technology
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Kobayashi Takashi
Department Of Physical Electronics Tokyo Institute Of Technology
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Chang Edward-yi
Department Of Materials Science And Engineering And Microelectronics And Information System Research
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Talahashi Shinnosuke
Department of Physical Electronics, Tokyo Institute of Technology
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Kanazawa Toru
Department Of Physical Electronics Tokyo Institute Of Technology
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SATO Ken
Department of Dermatology, Iwate Medical University School of Medicine
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Arai Shigehisa
Department Of Physical Electronics Tokyo Institute Of Technology
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SATO Kuninori
National Institute for Fusion Science
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Asada Masahiro
Department of Neurosurgery, Chibune Hospital
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Yamahata Shoji
Ntt Photonics Laboratories
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Yamahata Shoji
Ntt Corp. Atsugi‐shi Jpn
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Sato K
Asahi Glass Co. Ltd. Yokohama Jpn
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Sato K
Depertment Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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Sato K
Faculty Of Applied Biological Science Hiroshima University
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Sato K
National Institute For Fusion Science
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Asada Masahiro
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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Furuya Keiichi
Department Of Industiral Chemistry Faculty Of Engineering The University Of Tokyo
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Arai Shigehisa
Department Of Electrical And Electronics Engineering Tokyo Institute Of Technology
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Hattori Tetsuya
Depaetment Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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Hattori Tetsuya
Department Of Physics Gakushuin University
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Hattori Tetsuya
Department Of Mathematics Faculty Of Science Rikkyo University
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Sato Kuninori
Institute For Fusion Science
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Sato K
National Defense Acad. Yokosuka Jpn
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Sato K
Faculty Of Technology Tokyo Universily Of Agriculture And Technology
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KURISHIMA Kenji
NTT Photonics Laboratories, NTT Corporation
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Sasaki K
Nagoya Univ. Nagoya Jpn
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HATTORI Takeo
New Industry Creation Hatchery Center, Tohoku University
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KASHIO Norihide
NTT Photonics Laboratories, NTT Corporation
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FUKAI YoshinoYoshino
NTT Photonics Laboratories, NTT Corporation
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Hattori Takashi
Central Research Laboratory Hitachi Ltd.
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CAO Ming
Department of Physical Electronics, Tokyo Institute of Technology
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SHINGAI Yasushi
Department of Physical Electronics, Tokyo Institute of Technology
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Fukai Yoshinoyoshino
Ntt Photonics Laboratories Ntt Corporation
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Hattori T
New Industry Creation Hatchery Center Tohoku University
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Sato K
Dept. Of Energy Engineering And Science Nagoya University
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YAMAGAMI Shigeharu
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
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SUHARA Michihiko
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
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Kashima Issei
Department Of Physical Electronics Tokyo Institute Of Technology
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HONJI Hidetaka
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
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Cao Ming
Department Of Physical Electronics Tokyo Institute Of Technology
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Suwa Akira
Department Of Internal Medicine And Pathology School Of Medicine Keio University
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Nakagawa Ryo
Department Of Biotechnology Graduate School Of Engineering Nagoya University
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Tamura Shigeo
Department Of Medicine And Clinical Science Gunma University Graduate School Of Medicine
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Honji Hidetaka
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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Machida Nobuya
Department Of Chemistry Konan University
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Furuya K
Department Of Physical Electronics Graduate School Of Science And Engineering Tokyo Institute Of Tec
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SATO Kazuo
Faculty of Education, Tokusima University
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Kanazawa Toru
Department of Physical Electronics, Tokyo Institute of Technology
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YAMAGAMI Shigeharu
Silicon Systems Research Labs.
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Kurishima Kenji
Ntt Photonics Laboratories Ntt Corporation
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Kashio Norihide
Ntt Photonics Laboratories Ntt Corporation
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Takeuchi Katsuhiko
Department Of Materials Science & Engineering Nagoya Institute Of Technology
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Hattori Takeo
Faculty Of Engineering Musashi Institute Of Technology
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INAMURA Etsuko
Department of Electrical and Electronic Engineering
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TAKASUGI Teruhisa
Department of Electrical and Electronic Engineering
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Ikeda Shunsuke
Department Of Physical Electronics Tokyo Institute Of Technology
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Suhara Michihiko
Department Of Electrical And Electronic Engineering Graduate School Of Science And Engineering Tokyo
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Hirai Jun
Department Of Applied Physics Graduate School Of Engineering Osaka City University
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古屋 一仁
東京工業大学院理工学研究科
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Ravikumar K.g.
Department Of Physical Electronics Tokyo Institute Of Technology
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Ravikumar K.g.
The Advanced Tech. R&d Center Fujikura Ltd.
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宮本 恭幸
東京工業大学
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Arai Shigehisa
Faculty Of Engineering Tokyo Institute Of Technology
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NAKAMURA Yuji
Graduate School of Energy Science, Kyoto University
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KINOSHITA SATORU
Department of Pediatrics, School of Medicine, Niigata University
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HIRAYAMA Hideki
Department of Physical Electronics, Tokyo Institute of Technology
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Kang Y
Konkuk Univ. Seoul Kor
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Nakamura Yuji
Department of Pharmacology, School of Medicine, Toho University, Japan
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Kang Young
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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Kato Atsushi
Department Of General Surgery Chiba University Graduate School Of Medicine
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Yamazaki Daisuke
Department Of Electrical And Communication Engineering Graduate School Of Engineering Tohoku Univers
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Yamazaki D
Tohoku Univ. Sendai Jpn
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町田 信也
東京工業大学大学院理工学研究科:科学技術振興機構crest
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ISHIDA Masashi
Department of Orthopaedics, Graduate School of Medical Science, Kyoto Prefectural University of Medi
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Tanaka Hiroaki
Department of Cardiovascular Medicine, Tottori University Faculty of Medicine
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MACHIDA Nobuya
Department of Physical Electronics, Tokyo Institute of Technology
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MIZUMOTO Tetsuya
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
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Nagase Masanori
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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Nishihori Kazuya
Department Of Physical Electronics Tokyo Institute Of Technology:(present Office)toshiba Corporation
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Yamada Masayuki
Department Of Polymer Chemistry Tokyo Institute Of Technology
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WATANABE Masahiro
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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Hirayama Hideki
Department Of Physical Electronics Tokyo Institute Of Technology
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Nakagawa Ryo
Department of Biotechnology, Graduate School of Engineering, Nagoya University
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Yamaura Shinji
Department Of Electrical And Electronics Engineering Tokyo Institute Of Technology
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MIYAKE Yasunari
Department of Electrical and Electronics Engineering, Tokyo Institute of Technology
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Miyake Yasunari
Department Of Physical Electronics Tokyo Institute Of Technology
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Miyake Yasunari
Department Of Electrical And Electronics Engineering Tokyo Institute Of Technology
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KOHTOKU Masaki
Department of Physical Electronics, Tokyo Institute of Technology
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Tanaka Hiroaki
Department Of Cardiovascular Medicine Tottori University Fuculty Of Medicine
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Kinoshita Satoru
Department Of Physical Electronics Tokyo Institute Of Technology
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Nakamura Y
Kyoto Univ. Uji Jpn
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Yamazaki Daisuke
Department Of Applied Chemistry Faculty Of Engineering Gunma University
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KASHIMA Issei
Department of Physical Electronics, Tokyo Institute of Technology
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KOKUBO Atsushi
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
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FUNAYAMA Miyako
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
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MORITA Takenori
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
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NAKAYAMA Masatoshi
Information Technology R & D Center, Mitsubishi Electric Corporation
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NAKAMURA Hifumi
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
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Kohtoku Masaki
Department Of Physical Electronics Tokyo Institute Of Technology
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Azuma Yasuo
Department Of Applied Chemistry Tokai University
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Sugou Shigeo
Department Of Physical Electronics Tokyo Institute Of Technology
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Nakagawa Ryo
Department Of Physical Electronics Tokyo Institute Of Technology
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Yamamoto Ren
Department Of Physical Electronics Tokyo Institute Of Technology
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Chen Szu-hung
Department Of Materials Science And Engineering And Microelectronics And Information Systems Researc
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Majima Yutaka
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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Tamura Shigeo
Department Of Physical Electronics
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Ishida Masashi
Department Of Physical Electronics Tokyo Institute Of Technology
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Ishida Masashi
Department Of Chemistry Nagoya University
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Nakamura Hifumi
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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Funayama Miyako
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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Tanaka Tsuyosi
Tokyo Research Center Tosoh Corporation
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Morita Takenori
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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NAITO Yoshiyuki
Department of Anesthesia, Kobe City General Hospital
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MORITA Tatsuo
Department of Physical Electronics, Tokyo Institute of Technology
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NAGATSUKA Hiromi
Department of Physical Electronics, Tokyo Institute of Technology
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HARADA Yoshimichi
the Department of Physical Electronics, Tokyo Institute of Technology
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HARADA Yoshimichi
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
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MATSUNUMA Takeshi
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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NAGAO Chuma
Department of Electrical and Electric Engineering, Tokyo Institute of Technology
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OTAKE Toshihiko
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
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YOSHINAGA Jiroo
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
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Kinoshita S
Toshiba Corp. Yokohama Jpn
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Yoshinaga Jiroo
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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Nagatsuka Hiromi
Department Of Physical Electronics Tokyo Institute Of Technology
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Matsunuma T
Tokyo Inst. Technol. Tokyo Jpn
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Matsunuma Takeshi
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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Furuya Kazuhito
Department Of Physical Electronics Tokyo Institute Of Technology
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Furuya Kazuhito
Department Of Electrical And Electronics Engineering Tokyo Institute Of Technology
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Oishi Toshiyuki
Information Technology R&d Center Mitsubishi Electric Corporation
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Naito Yoshiyuki
Department Of Anesthesia Kobe City General Hospital
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Naito Yoshiyuki
Department Of Physical Electronics Faculty Of Engineering Tokyo Institute Of Technology
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Morita Tatsuo
Department Of Physical Electronics Tokyo Institute Of Technology
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Morita Tatsuo
Department Of Applied Physics Waseda University
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Nakamura Yuji
Department Of Materials Engineering Graduate School Of Engineering The University Of Tokyo:crest Jap
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Suemasu Takashi
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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Nagao Chuma
Department Of Electrical And Electric Engineering Tokyo Institute Of Technology
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Kokubo Atsushi
Depaetment Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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Tanaka Tsuyoshi
Tokyo Univ. Agri. Tech.
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ISHIHARA Kanji
Department of Physical Electronics, Tokyo Institute of Technology
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UESAKA Katsumi
Department of Physical Electronics, Tokyo Institute of Technology
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MIYAUCHI Motoya
Department of Physical Electronics, Tokyo Institute of Technology
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Kameyama Atsuhi
Department of Physical Electronics, Tokyo Institute of Technology
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Machida Nobuya
Department Of Physical Electronics Tokyo Institute Of Technology:crest Japan Science And Technology
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Wernersson Lars-erik
Solid State Physics Lund University
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Kinoshita Satoru
Department Of Child Neurology National Center Of Neurology And Psychiatry (ncnp)
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Miyamoto Yasuyuki
Department Of Physical Electronics Tokyo Institute Of Technology
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Miyauchi Motoya
Department Of Physical Electronics Tokyo Institute Of Technology
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HASE Eiji
Department of Life Sciences, Nippon Sport Science University
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TAKAHASHI Shinnosuke
Department of Physical Electronics, Tokyo Institute of Technology
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Suemasu Takeshi
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
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Ishihara Kanji
Department Of Physical Electronics Tokyo Institute Of Technology
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Uesaka Katsumi
Department Of Physical Electronics Tokyo Institute Of Technology
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Tokudome Kohichi
Development Division, Tosoh FineChem Corporation, 4555 Kaisei-cho, Shunan, Yamaguchi 746-0006, Japan
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Tokudome Kohichi
Development Division Tosoh Finechem Corporation
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Mizumoto Tetsuya
Department Of Eee Tokyo Institute Of Technology
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Mizumoto Tetsuya
Department Of Physical Electronics Faculty Of Engineering Tokyo Institute Of Technology
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Harada Y
Univ. Hyogo Himeji‐shi Jpn
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Kang Young
Department Of Chemistry Sogang University
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Terao Ryousuke
Department Of Physical Electronics Tokyo Institute Of Technology
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Otake Toshihiko
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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Chang Chia-yuan
Department Of Chemical Engineering National Taiwan University
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YONAI Yoshiharu
Department of Physical Electronics, Tokyo Institute of Technology
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KURIHARA Kazuhiro
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
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SEKIGUCHI Tomonori
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
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Sekiguchi Tomonori
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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Miyamoto Yasuyuki
Department Of Electrical And Electronics Engineering Tokyo Institute Of Technology
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Miyamoto Yasuyuki
Department Of Physical Electronics Faculty Of Engineering Tokyo Institute Of Technology
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Matsumoto Yutaka
Department Of Material Physics Faculty Of Engineering Science Osaka University
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Yonai Yoshiharu
Department Of Physical Electronics Tokyo Institute Of Technology
著作論文
- Fabrication of Ultrafine X-Ray Mask Using Precise Crystal Growth Technique
- High-performance and reliable InP/InGaAs HBTs operating at high current density (Electron devices: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
- High-performance and reliable InP/InGaAs HBTs operating at high current density (Silicon devices and materials: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
- Light Emission from Quantum-Box Structure by Current Injection
- High-Quality n-GaInAs Grown by OMVPE Using Si_2H_6 by High-Velocity Flow
- Estimation of Collector Current Spreading in InGaAs SHBT Having 75-nm-Thick Collector
- Current Gain and Voltage Gain in Hot Electron Transistors without Base Layer(THz Devices,Heterostructure Microelectronics with TWHM2005)
- Wrapped Alignment Marks for Fabrication of Interference/Diffraction Hot Electron Devices
- W/Cr/Au/SiO_2 Composite Alignment Mark for Fabrication of Interference/Diffraction Hot Electron Devices
- Nanostrueture Alignment for Hot Electron Interference/Diffraction Devices
- Ultrafine Fabrication Technique for Hot Electron Interference/Diffraction Devices
- Effect of Spacer Layer Thickness on Energy Level Width Narrowing in GaInAs/InP Resonant Tunneling Diodes Grown by Organo-Metallic Vapor Phase Epitaxy
- Transport Anisotropy of Si Delta-Doped Layer in InP Grown by OMVPE
- Theoretical Gain of Quantum-Well Wire Lasers
- Febrication of InP/GaInAs Double Heterojunction Bipolar Transistors with a 0.1-μm-Wide Emitter : Semiconductors
- Reduction of Base-Collector Capacitance inSubmicron InP/GalnAs Heterojunction Bipolar Transistors with Buried Tungsten Wires : Semiconductors
- Peak Width Analysis of Current-Voltage Characteristics of Triple-Barrier Resonant Tunneling Diodes
- First Fabrication of GaInAs/InP Buried Metal Heterojunction Bipolar Transistor and Reduction of Base-Collector Capacitance
- Characterization of GaInAs/InP Triple-Barrier Resonant Tunneling Diodes Grown by Organo-Metallic Vapor Phase Epitaxy for High-Temperature Estimation of Phase Coherent Length of Electrons
- Seventy-nm-Pitch Patterning on CaF_2 by e-beam Exposure
- High Temperature Estimation of Phase Coherent Length of Hot Electron Using GaInAs/InP Triple-Barrier Resonant Tunneling Diodes Grown by OMVPE
- Monolayer Steps Formation in InP and GaInAs by OMVPE and Reduction of Resonant Energy Width in GaInAs/InP RTDs
- Electrical Properties of 100 nm Pitch Cr/Au Fine Electrodes with 40 nm Width on GaInAs
- Fabrication of Vertical InGaAs Channel Metal-Insulator-Semiconductor Field Effect Transistor with a 15-nm-Wide Mesa Structure and a Drain Current Density of 7MA/cm^2
- 招待講演 InGaAs/InP MISFET with epitaxially grown source (Silicon devices and materials)
- 招待講演 InGaAs/InP MISFET with epitaxially grown source (Electron devices)
- Crystal Growth of InP on a Gd_3Ga_5O_ Substrate by Organometallic Chemical Vapor Deposition
- GaInAs/InP Hot Electron Transistors Grown by OMVPE
- Estimation of Phase Coherent Length of Hot Electrons in GaInAs Using Resonant Tunneling Diodes
- GaInAsP/InP Single Quantum-Well Lasers by OMVPE
- Conditions for OMVPE Growth of GaInAsP/InP Crystal
- Vertical InGaAs Channel Metal--Insulator--Semiconductor Field Effect Transistor with High Current Density
- Flip-Chip Packaging of Low-Noise Metamorphic High Electron Mobility Transistors on Low-Cost Organic Substrate
- Estimation of collector current spreading in InGaAs SHBT having 75-nm-thick collector
- Estimation of collector current spreading in InGaAs SHBT having 75-nm-thick collector
- Improvement of Regrown Interface in InP Organo-Metallic Vapor Phase Epitaxy
- Effects of Low-Oxygen-Content Metalorganic Precursors on AlInAs and High Electron Mobility Transistor Structures with the Thick AlInAs Buffer Layer
- InP/InGaAs Composite Metal-Oxide-Semiconductor Field-Effect Transistors with Regrown Source and Al_2O_3 Gate Dielectric Exhibiting Maximum Drain Current Exceeding 1.3mA/μm
- Wet Chemical Etching for Ultrafine Periodic Structure : Rectangular InP Corrugations of 70 nm Pitch and 100 nm Depth : Etching and Deposition Technology
- Observation of InP Surfaces after (NH_4)_2S_x Treatment by a Scanning Tunneling Microscope
- Numerical Analysis of the Effect of P-Regions on the I-V Kink in GaAs MESFETs(Semiconductor Materials and Devices)
- Influence of Impurities on the Performance of Doped-Well GaInAs/InP Resonant Tunneling Diodes
- High Peak-to-Valley Current Ratio GaInAs/GaInP Resonant Tunneling Diodes
- Improvement of Organometallic Vapor Phase Epitaxy Regrown GaInAs/InP Heterointerface by Surface Treatment
- InAs High Electron Mobility Transistors with Buried Gate for Ultralow-Power-Consumption Low-Noise Amplifier Application
- Reduction of Output Conductance in Vertical InGaAs Channel Metal-Insulator-Semiconductor Field-Effect Transistor Using Heavily Doped Drain Region
- Fabrication of InP/InGaAs SHBT on Si Substrate by Using Transferred Substrate Process
- Bias-Dependent Radio Frequency Performance for 40 nm InAs High-Electron-Mobility Transistor with a Cutoff Frequency Higher than 600 GHz
- InP Hot Electron Transistors with Emitter Mesa Fabricated between Gate Electrodes for Reduction in Emitter-Gate Gate-Leakage Current
- Reduction of Base-Collector Capacitance in InP/InGaAs DHBT with Buried SiO_2 Wires
- DC and RF Performance Improvement of 70 nm Quantum Well Field Effect Transistor by Narrowing Source–Drain Spacing Technology
- High-Performance In0.52Al0.48As/In0.6Ga0.4As Power Metamorphic High Electron Mobility Transistor for Ka-Band Applications
- Observation of Current Modulation through Self-Assembled Monolayer Molecule in Transistor Structure
- Increase in Collector Current in Hot-Electron Transistors Controlled by Gate Bias
- Monte Carlo Analysis of Base Transit Times of InP/GaInAs Heterojunction Bipolar Transistors with Ultrathin Graded Bases
- InP Hot Electron Transistors with a Buried Metal Gate
- Fabrication of GaInAs/InP Heterojunction Bipolar Transistors with a Single Tungsten Wire as Collector Electrode
- InP/InGaAs Hot Electron Transistors with Insulated Gate
- Design and Simulation of Hot-Electron Diffraction Observation Using Scanning Probe: Quantitative Evaluation of Observation Possibility
- High Open-Circuit Voltage Gain in Vertical InGaAs Channel Metal--Insulator--Semiconductor Field-Effect Transistor Using Heavily Doped Drain Region and Narrow Channel Mesa
- InAs Thin-Channel High-Electron-Mobility Transistors with Very High Current-Gain Cutoff Frequency for Emerging Submillimeter-Wave Applications
- Mechanism Study of Gate Leakage Current for AlGaN/GaN High Electron Mobility Transistor Structure Under High Reverse Bias by Thin Surface Barrier Model and Technology Computer Aided Design Simulation
- Wet Chemical Etching for Ultrafine Periodic Structure: Rectangular InP Corrugations of 70 nm Pitch and 100 nm Depth
- Improvement in Gate Insulation in InP Hot Electron Transistors for High Transconductance and High Voltage Gain
- High Open-Circuit Voltage Gain in Vertical InGaAs Channel Metal-Insulator-Semiconductor Field-Effect Transistor Using Heavily Doped Drain Region and Narrow Channel Mesa (Special Issue : Solid State Devices and Materials)
- Reduction of Base-Collector Capacitance in InP/InGaAs DHBT with Buried SiO2 Wires
- InAs Thin-Channel High-Electron-Mobility Transistors with Very High Current-Gain Cutoff Frequency for Emerging Submillimeter-Wave Applications
- InAs Thin-Channel High-Electron-Mobility Transistors with Very High Current-Gain Cutoff Frequency for Emerging Submillimeter-Wave Applications