Effects of Low-Oxygen-Content Metalorganic Precursors on AlInAs and High Electron Mobility Transistor Structures with the Thick AlInAs Buffer Layer

スポンサーリンク

概要

• 論文の詳細を見る

• We investigated the effects of low-oxygen-content metalorganic precursors on oxygen impurities and Hall mobility. The oxygen concentration in the AlInAs layer was less than $2\times 10^{17}$ cm-3 under all growth conditions. We confirmed the high mobility of the AlInAs/InP high electron mobility transistors (HEMT) structure with the AlInAs buffer layer (5,500 cm2/V$\cdot$s at 300 K, and 110,000 cm2/V$\cdot$s at 77 K). For the AlInAs/GaInAs HEMT structure with the same buffer layer, we obtained the high mobility (12,000 cm2/V$\cdot$s at 300 K, and 92,000 cm2/V$\cdot$s at 77 K).

• Japan Society of Applied Physicsの論文
• 2003-08-15

著者

• Tanaka Tsuyosi

  Tokyo Research Center Tosoh Corporation

• Tanaka Tsuyoshi

  Tokyo Univ. Agri. Tech.

• Miyamoto Yasuyuki

  Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology

• Tokudome Kohichi

  Development Division, Tosoh FineChem Corporation, 4555 Kaisei-cho, Shunan, Yamaguchi 746-0006, Japan

• Tokudome Kohichi

  Development Division Tosoh Finechem Corporation

• Miyamoto Yasuyuki

  Department Of Electrical And Electronic Engineering

関連論文

• Fabrication of Ultrafine X-Ray Mask Using Precise Crystal Growth Technique
• High-performance and reliable InP/InGaAs HBTs operating at high current density (Electron devices: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
• High-performance and reliable InP/InGaAs HBTs operating at high current density (Silicon devices and materials: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
• Light Emission from Quantum-Box Structure by Current Injection
• High-Quality n-GaInAs Grown by OMVPE Using Si_2H_6 by High-Velocity Flow
• Estimation of Collector Current Spreading in InGaAs SHBT Having 75-nm-Thick Collector
• Current Gain and Voltage Gain in Hot Electron Transistors without Base Layer(THz Devices,Heterostructure Microelectronics with TWHM2005)
• Wrapped Alignment Marks for Fabrication of Interference/Diffraction Hot Electron Devices
• W/Cr/Au/SiO_2 Composite Alignment Mark for Fabrication of Interference/Diffraction Hot Electron Devices
• Nanostrueture Alignment for Hot Electron Interference/Diffraction Devices
• Ultrafine Fabrication Technique for Hot Electron Interference/Diffraction Devices
• Effect of Spacer Layer Thickness on Energy Level Width Narrowing in GaInAs/InP Resonant Tunneling Diodes Grown by Organo-Metallic Vapor Phase Epitaxy
• Transport Anisotropy of Si Delta-Doped Layer in InP Grown by OMVPE
• Theoretical Gain of Quantum-Well Wire Lasers
• Febrication of InP/GaInAs Double Heterojunction Bipolar Transistors with a 0.1-μm-Wide Emitter : Semiconductors
• Reduction of Base-Collector Capacitance inSubmicron InP/GalnAs Heterojunction Bipolar Transistors with Buried Tungsten Wires : Semiconductors
• Peak Width Analysis of Current-Voltage Characteristics of Triple-Barrier Resonant Tunneling Diodes
• First Fabrication of GaInAs/InP Buried Metal Heterojunction Bipolar Transistor and Reduction of Base-Collector Capacitance
• Characterization of GaInAs/InP Triple-Barrier Resonant Tunneling Diodes Grown by Organo-Metallic Vapor Phase Epitaxy for High-Temperature Estimation of Phase Coherent Length of Electrons
• Seventy-nm-Pitch Patterning on CaF_2 by e-beam Exposure
• High Temperature Estimation of Phase Coherent Length of Hot Electron Using GaInAs/InP Triple-Barrier Resonant Tunneling Diodes Grown by OMVPE
• Monolayer Steps Formation in InP and GaInAs by OMVPE and Reduction of Resonant Energy Width in GaInAs/InP RTDs
• Electrical Properties of 100 nm Pitch Cr/Au Fine Electrodes with 40 nm Width on GaInAs
• Fabrication of Vertical InGaAs Channel Metal-Insulator-Semiconductor Field Effect Transistor with a 15-nm-Wide Mesa Structure and a Drain Current Density of 7MA/cm^2
• 招待講演 InGaAs/InP MISFET with epitaxially grown source (Silicon devices and materials)
• 招待講演 InGaAs/InP MISFET with epitaxially grown source (Electron devices)
• Crystal Growth of InP on a Gd_3Ga_5O_ Substrate by Organometallic Chemical Vapor Deposition
• MN-P27 Development of highly efficient cell entrapment microfluidic chamber fabricated on photosensor array(Section X Micro/Nano Technology for Analysis and Cell Manipulation)
• GaInAs/InP Hot Electron Transistors Grown by OMVPE
• Estimation of Phase Coherent Length of Hot Electrons in GaInAs Using Resonant Tunneling Diodes
• GaInAsP/InP Single Quantum-Well Lasers by OMVPE
• Conditions for OMVPE Growth of GaInAsP/InP Crystal
• Vertical InGaAs Channel Metal--Insulator--Semiconductor Field Effect Transistor with High Current Density
• Flip-Chip Packaging of Low-Noise Metamorphic High Electron Mobility Transistors on Low-Cost Organic Substrate
• Estimation of collector current spreading in InGaAs SHBT having 75-nm-thick collector
• Estimation of collector current spreading in InGaAs SHBT having 75-nm-thick collector
• Improvement of Regrown Interface in InP Organo-Metallic Vapor Phase Epitaxy
• Effects of Low-Oxygen-Content Metalorganic Precursors on AlInAs and High Electron Mobility Transistor Structures with the Thick AlInAs Buffer Layer
• InP/InGaAs Composite Metal-Oxide-Semiconductor Field-Effect Transistors with Regrown Source and Al_2O_3 Gate Dielectric Exhibiting Maximum Drain Current Exceeding 1.3mA/μm
• Wet Chemical Etching for Ultrafine Periodic Structure : Rectangular InP Corrugations of 70 nm Pitch and 100 nm Depth : Etching and Deposition Technology
• Observation of InP Surfaces after (NH_4)_2S_x Treatment by a Scanning Tunneling Microscope
• Numerical Analysis of the Effect of P-Regions on the I-V Kink in GaAs MESFETs(Semiconductor Materials and Devices)
• Influence of Impurities on the Performance of Doped-Well GaInAs/InP Resonant Tunneling Diodes
• BR-O1 Performance of marine diatom Navicula sp. JPCC DA0580 as high lipids producer for biofuel production(Section IV Biorefinery)
• High Peak-to-Valley Current Ratio GaInAs/GaInP Resonant Tunneling Diodes
• Improvement of Organometallic Vapor Phase Epitaxy Regrown GaInAs/InP Heterointerface by Surface Treatment
• InAs High Electron Mobility Transistors with Buried Gate for Ultralow-Power-Consumption Low-Noise Amplifier Application
• Reduction of Output Conductance in Vertical InGaAs Channel Metal-Insulator-Semiconductor Field-Effect Transistor Using Heavily Doped Drain Region
• Fabrication of InP/InGaAs SHBT on Si Substrate by Using Transferred Substrate Process
• Bias-Dependent Radio Frequency Performance for 40 nm InAs High-Electron-Mobility Transistor with a Cutoff Frequency Higher than 600 GHz
• InP Hot Electron Transistors with Emitter Mesa Fabricated between Gate Electrodes for Reduction in Emitter-Gate Gate-Leakage Current
• Reduction of Base-Collector Capacitance in InP/InGaAs DHBT with Buried SiO_2 Wires
• DC and RF Performance Improvement of 70 nm Quantum Well Field Effect Transistor by Narrowing Source–Drain Spacing Technology
• High-Performance In0.52Al0.48As/In0.6Ga0.4As Power Metamorphic High Electron Mobility Transistor for Ka-Band Applications
• Observation of Current Modulation through Self-Assembled Monolayer Molecule in Transistor Structure
• Increase in Collector Current in Hot-Electron Transistors Controlled by Gate Bias
• Monte Carlo Analysis of Base Transit Times of InP/GaInAs Heterojunction Bipolar Transistors with Ultrathin Graded Bases
• InP Hot Electron Transistors with a Buried Metal Gate
• Fabrication of GaInAs/InP Heterojunction Bipolar Transistors with a Single Tungsten Wire as Collector Electrode
• InP/InGaAs Hot Electron Transistors with Insulated Gate
• Design and Simulation of Hot-Electron Diffraction Observation Using Scanning Probe: Quantitative Evaluation of Observation Possibility
• High Open-Circuit Voltage Gain in Vertical InGaAs Channel Metal--Insulator--Semiconductor Field-Effect Transistor Using Heavily Doped Drain Region and Narrow Channel Mesa
• InAs Thin-Channel High-Electron-Mobility Transistors with Very High Current-Gain Cutoff Frequency for Emerging Submillimeter-Wave Applications
• Mechanism Study of Gate Leakage Current for AlGaN/GaN High Electron Mobility Transistor Structure Under High Reverse Bias by Thin Surface Barrier Model and Technology Computer Aided Design Simulation
• Wet Chemical Etching for Ultrafine Periodic Structure: Rectangular InP Corrugations of 70 nm Pitch and 100 nm Depth
• Improvement in Gate Insulation in InP Hot Electron Transistors for High Transconductance and High Voltage Gain
• High Open-Circuit Voltage Gain in Vertical InGaAs Channel Metal-Insulator-Semiconductor Field-Effect Transistor Using Heavily Doped Drain Region and Narrow Channel Mesa (Special Issue : Solid State Devices and Materials)
• Reduction of Base-Collector Capacitance in InP/InGaAs DHBT with Buried SiO2 Wires
• InAs Thin-Channel High-Electron-Mobility Transistors with Very High Current-Gain Cutoff Frequency for Emerging Submillimeter-Wave Applications
• InAs Thin-Channel High-Electron-Mobility Transistors with Very High Current-Gain Cutoff Frequency for Emerging Submillimeter-Wave Applications

もっと見る 閉じる

スポンサーリンク